GB1318087A - Method of operating a semiconductor element exhibiting charge storage effect - Google Patents

Method of operating a semiconductor element exhibiting charge storage effect

Info

Publication number
GB1318087A
GB1318087A GB2584170A GB2584170A GB1318087A GB 1318087 A GB1318087 A GB 1318087A GB 2584170 A GB2584170 A GB 2584170A GB 2584170 A GB2584170 A GB 2584170A GB 1318087 A GB1318087 A GB 1318087A
Authority
GB
United Kingdom
Prior art keywords
charge storage
junction
illumination
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2584170A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST FOR HALVLEDERFORSKNING AB
Original Assignee
INST FOR HALVLEDERFORSKNING AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST FOR HALVLEDERFORSKNING AB filed Critical INST FOR HALVLEDERFORSKNING AB
Publication of GB1318087A publication Critical patent/GB1318087A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Hybrid Cells (AREA)
GB2584170A 1969-05-30 1970-05-28 Method of operating a semiconductor element exhibiting charge storage effect Expired GB1318087A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE07683/69*A SE331864B (enrdf_load_stackoverflow) 1969-05-30 1969-05-30

Publications (1)

Publication Number Publication Date
GB1318087A true GB1318087A (en) 1973-05-23

Family

ID=20272024

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2584170A Expired GB1318087A (en) 1969-05-30 1970-05-28 Method of operating a semiconductor element exhibiting charge storage effect

Country Status (5)

Country Link
DE (1) DE2026411A1 (enrdf_load_stackoverflow)
FR (1) FR2043851B1 (enrdf_load_stackoverflow)
GB (1) GB1318087A (enrdf_load_stackoverflow)
NL (1) NL7007783A (enrdf_load_stackoverflow)
SE (1) SE331864B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU915683A1 (ru) * 1980-10-23 1985-10-23 Fizicheskoj I Im P N Lebedeva ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502884A (en) * 1966-12-19 1970-03-24 Rca Corp Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer

Also Published As

Publication number Publication date
FR2043851B1 (enrdf_load_stackoverflow) 1975-01-10
NL7007783A (enrdf_load_stackoverflow) 1970-12-02
FR2043851A1 (enrdf_load_stackoverflow) 1971-02-19
SE331864B (enrdf_load_stackoverflow) 1971-01-18
DE2026411A1 (de) 1971-12-16

Similar Documents

Publication Publication Date Title
GB1481672A (en) Semiconductor devices
ES410894A1 (es) Dispositivo electrico y metodo para la formacion del mismo.
ES398775A1 (es) Circuito electronico de diodo de resistencia negativa.
GB954532A (en) Semi-conductor adjustable band pass filter
GB1318087A (en) Method of operating a semiconductor element exhibiting charge storage effect
GB1466325A (en) Infra-red detector
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors
JPS55111171A (en) Field-effect semiconductor device
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
GB1447763A (en) Semiconductor device
GB1032235A (en) Improvements in and relating to semiconductor thermometers
GB1177736A (en) Improvements in or Relating to Junction Capacitors
JPS5378181A (en) Semiconductor device and its manufacture
JPS5377476A (en) Semiconductor integrated circuit device
GB1290718A (enrdf_load_stackoverflow)
GB1214180A (en) Semiconductor devices
SU824831A1 (ru) Полупроводниковый прибор
BELOVA et al. On the distribution of impurities in heavily doped germanium p-n junctions(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes)
BELOVA et al. Study of the dependence of minority carrier lifetime on the concentration of majority carriers in heavily doped germanium by means of p-n junctions(Minority carrier lifetime dependence on majority carrier concentrations based on diffusion capacitance measurements in germanium p-n junction)
SU270118A1 (ru) Фоторезистор
GB1058753A (en) Improvements relating to solid state devices
BOIKO et al. Polarization of the firmament and the transparency of the atmosphere(Atmospheric transparency and correlation to polarization for yellow-green spectral region)
Goetzberger et al. Avalanche effects in silicon p-n junctions. i- localized photomultiplication studies on microplasmas(Photocurrent multiplication in a microplasma measured as a function of reverse voltage in silicon p-n junction, noting avalanche effects)
GB1231543A (enrdf_load_stackoverflow)
JPS5298480A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees