GB1316559A - Transistors and production thereof - Google Patents

Transistors and production thereof

Info

Publication number
GB1316559A
GB1316559A GB4499872A GB4499870A GB1316559A GB 1316559 A GB1316559 A GB 1316559A GB 4499872 A GB4499872 A GB 4499872A GB 4499870 A GB4499870 A GB 4499870A GB 1316559 A GB1316559 A GB 1316559A
Authority
GB
United Kingdom
Prior art keywords
layer
type
base region
active
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4499872A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP44073848A external-priority patent/JPS4831514B1/ja
Priority claimed from JP44073847A external-priority patent/JPS5125712B1/ja
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of GB1316559A publication Critical patent/GB1316559A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB4499872A 1969-09-18 1970-04-23 Transistors and production thereof Expired GB1316559A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP44073848A JPS4831514B1 (enExample) 1969-09-18 1969-09-18
JP44073847A JPS5125712B1 (enExample) 1969-09-18 1969-09-18

Publications (1)

Publication Number Publication Date
GB1316559A true GB1316559A (en) 1973-05-09

Family

ID=26414996

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4499872A Expired GB1316559A (en) 1969-09-18 1970-04-23 Transistors and production thereof
GB2361972A Expired GB1313829A (en) 1969-09-18 1970-05-15 Transistors and aproduction thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2361972A Expired GB1313829A (en) 1969-09-18 1970-05-15 Transistors and aproduction thereof

Country Status (4)

Country Link
US (1) US3764396A (enExample)
DE (1) DE2028146A1 (enExample)
GB (2) GB1316559A (enExample)
NL (1) NL140659B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975221A (en) * 1973-08-29 1976-08-17 American Micro-Systems, Inc. Low capacitance V groove MOS NOR gate and method of manufacture
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors
JPS5431872B2 (enExample) * 1974-09-06 1979-10-09
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
US4038107B1 (en) * 1975-12-03 1995-04-18 Samsung Semiconductor Tele Method for making transistor structures
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
EP0139663A1 (en) * 1983-04-04 1985-05-08 Motorola, Inc. Self-aligned ldmos and method
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
DE69429913T2 (de) * 1994-06-23 2002-10-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US6426673B2 (en) 1997-07-30 2002-07-30 Programmable Silicon Solutions High performance integrated radio frequency circuit devices
US6535034B1 (en) 1997-07-30 2003-03-18 Programmable Silicon Solutions High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries
US5841694A (en) * 1997-07-30 1998-11-24 Programmable Silicon Solutions High performance programmable interconnect
US6077746A (en) * 1999-08-26 2000-06-20 Taiwan Semiconductor Manufacturing Company Using p-type halo implant as ROM cell isolation in flat-cell mask ROM process
JP2010114179A (ja) * 2008-11-05 2010-05-20 Hitachi Displays Ltd 表示装置および表示装置の製造方法
CN111785784B (zh) * 2020-07-20 2025-10-28 杭州奥罗拉半导体有限公司 功率半导体器件及其形成方法

Also Published As

Publication number Publication date
US3764396A (en) 1973-10-09
DE2028146A1 (de) 1971-04-08
NL7007988A (enExample) 1971-03-22
NL140659B (nl) 1973-12-17
GB1313829A (en) 1973-04-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee