GB1308711A - Combination switch units and integrated circuits - Google Patents

Combination switch units and integrated circuits

Info

Publication number
GB1308711A
GB1308711A GB1165270A GB1165270A GB1308711A GB 1308711 A GB1308711 A GB 1308711A GB 1165270 A GB1165270 A GB 1165270A GB 1165270 A GB1165270 A GB 1165270A GB 1308711 A GB1308711 A GB 1308711A
Authority
GB
United Kingdom
Prior art keywords
layer
regions
substrate
conductors
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1165270A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of GB1308711A publication Critical patent/GB1308711A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
GB1165270A 1969-03-13 1970-03-11 Combination switch units and integrated circuits Expired GB1308711A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80699469A 1969-03-13 1969-03-13
US88707669A 1969-12-22 1969-12-22

Publications (1)

Publication Number Publication Date
GB1308711A true GB1308711A (en) 1973-03-07

Family

ID=27122944

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1165270A Expired GB1308711A (en) 1969-03-13 1970-03-11 Combination switch units and integrated circuits

Country Status (6)

Country Link
BE (1) BE747342A (enrdf_load_stackoverflow)
CH (1) CH523573A (enrdf_load_stackoverflow)
DE (1) DE2011851C3 (enrdf_load_stackoverflow)
FR (1) FR2037195B1 (enrdf_load_stackoverflow)
GB (1) GB1308711A (enrdf_load_stackoverflow)
NL (1) NL170201C (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005104134A1 (de) * 2004-04-23 2005-11-03 Qimonda Ag Verfahren und vorrichtung zur programmierung von cbram-speicherzellen
CN111123046A (zh) * 2019-12-03 2020-05-08 国网河南省电力公司鹤壁供电公司 一种快速测量电缆绝缘强度的装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284363A (enrdf_load_stackoverflow) * 1960-03-23 1900-01-01
NL294168A (enrdf_load_stackoverflow) * 1963-06-17
DE1212155B (de) * 1964-02-05 1966-03-10 Danfoss As Elektrischer Speicher
US3383472A (en) * 1964-07-24 1968-05-14 Ericsson Telefon Ab L M Coordinate switch and telecommunication system comprising bilateral semiconductor switch means
SE313078B (enrdf_load_stackoverflow) * 1964-08-07 1969-08-04 Ericsson Telefon Ab L M
US3493932A (en) * 1966-01-17 1970-02-03 Ibm Integrated switching matrix comprising field-effect devices
FR1533269A (fr) * 1966-05-19 1968-07-19 Philips Nv Mémoire matricielle de lecture en matériau semi-conducteur
FR1526736A (fr) * 1966-08-22 1968-05-24 Fairchild Camera Instr Co Mémoire permanente à programmation optique
US3573757A (en) * 1968-11-04 1971-04-06 Energy Conversion Devices Inc Memory matrix having serially connected threshold and memory switch devices at each cross-over point
US3629863A (en) * 1968-11-04 1971-12-21 Energy Conversion Devices Inc Film deposited circuits and devices therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005104134A1 (de) * 2004-04-23 2005-11-03 Qimonda Ag Verfahren und vorrichtung zur programmierung von cbram-speicherzellen
US7400528B2 (en) 2004-04-23 2008-07-15 Qimonda Ag Intergrated circuit for programming resistive memory cells
CN111123046A (zh) * 2019-12-03 2020-05-08 国网河南省电力公司鹤壁供电公司 一种快速测量电缆绝缘强度的装置
CN111123046B (zh) * 2019-12-03 2022-06-10 国网河南省电力公司鹤壁供电公司 一种快速测量电缆绝缘强度的装置

Also Published As

Publication number Publication date
NL7003605A (enrdf_load_stackoverflow) 1970-09-15
DE2011851A1 (enrdf_load_stackoverflow) 1970-10-08
NL170201C (nl) 1982-10-01
CH523573A (de) 1972-05-31
BE747342A (fr) 1970-08-17
FR2037195A1 (enrdf_load_stackoverflow) 1970-12-31
FR2037195B1 (enrdf_load_stackoverflow) 1974-05-03
NL170201B (nl) 1982-05-03
DE2011851B2 (de) 1976-03-25
DE2011851C3 (de) 1981-03-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee