NL170201B - Matrix van geheugenelementen, die op een isolerende laag op een gemeenschappelijk halfgeleiderlichaam zijn aangebracht, waarbij ieder geheugenelement bestaat uit een eerste en een tweede elektrode en uit een tussen de elektroden neergeslagen laag van een halfgeleidermateriaal met twee stabiele geleidingstoestanden. - Google Patents
Matrix van geheugenelementen, die op een isolerende laag op een gemeenschappelijk halfgeleiderlichaam zijn aangebracht, waarbij ieder geheugenelement bestaat uit een eerste en een tweede elektrode en uit een tussen de elektroden neergeslagen laag van een halfgeleidermateriaal met twee stabiele geleidingstoestanden.Info
- Publication number
- NL170201B NL170201B NLAANVRAGE7003605,A NL7003605A NL170201B NL 170201 B NL170201 B NL 170201B NL 7003605 A NL7003605 A NL 7003605A NL 170201 B NL170201 B NL 170201B
- Authority
- NL
- Netherlands
- Prior art keywords
- memory elements
- stage
- monthly
- stages
- matrix
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80699469A | 1969-03-13 | 1969-03-13 | |
US88707669A | 1969-12-22 | 1969-12-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7003605A NL7003605A (nl) | 1970-09-15 |
NL170201B true NL170201B (nl) | 1982-05-03 |
NL170201C NL170201C (nl) | 1982-10-01 |
Family
ID=27122944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7003605,A NL170201C (nl) | 1969-03-13 | 1970-03-13 | Matrix van geheugenelementen, die op een isolerende laag op een gemeenschappelijk halfgeleiderlichaam zijn aangebracht, waarbij ieder geheugenelement bestaat uit een eerste en een tweede elektrode en uit een tussen de elektroden neergeslagen laag van een halfgeleidermateriaal met twee stabiele geleidingstoestanden. |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE747342A (nl) |
CH (1) | CH523573A (nl) |
DE (1) | DE2011851C3 (nl) |
FR (1) | FR2037195B1 (nl) |
GB (1) | GB1308711A (nl) |
NL (1) | NL170201C (nl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004019860B4 (de) | 2004-04-23 | 2006-03-02 | Infineon Technologies Ag | Verfahren und Vorrichtung zur Programmierung von CBRAM-Speicherzellen |
CN111123046B (zh) * | 2019-12-03 | 2022-06-10 | 国网河南省电力公司鹤壁供电公司 | 一种快速测量电缆绝缘强度的装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL262726A (nl) * | 1960-03-23 | 1900-01-01 | ||
NL294168A (nl) * | 1963-06-17 | |||
DE1212155B (de) * | 1964-02-05 | 1966-03-10 | Danfoss As | Elektrischer Speicher |
US3383472A (en) * | 1964-07-24 | 1968-05-14 | Ericsson Telefon Ab L M | Coordinate switch and telecommunication system comprising bilateral semiconductor switch means |
SE313078B (nl) * | 1964-08-07 | 1969-08-04 | Ericsson Telefon Ab L M | |
US3493932A (en) * | 1966-01-17 | 1970-02-03 | Ibm | Integrated switching matrix comprising field-effect devices |
FR1533269A (fr) * | 1966-05-19 | 1968-07-19 | Philips Nv | Mémoire matricielle de lecture en matériau semi-conducteur |
FR1526736A (fr) * | 1966-08-22 | 1968-05-24 | Fairchild Camera Instr Co | Mémoire permanente à programmation optique |
US3573757A (en) * | 1968-11-04 | 1971-04-06 | Energy Conversion Devices Inc | Memory matrix having serially connected threshold and memory switch devices at each cross-over point |
US3629863A (en) * | 1968-11-04 | 1971-12-21 | Energy Conversion Devices Inc | Film deposited circuits and devices therefor |
-
1970
- 1970-03-11 GB GB1165270A patent/GB1308711A/en not_active Expired
- 1970-03-12 FR FR7008944A patent/FR2037195B1/fr not_active Expired
- 1970-03-12 DE DE2011851A patent/DE2011851C3/de not_active Expired
- 1970-03-13 BE BE747342D patent/BE747342A/xx unknown
- 1970-03-13 CH CH378370A patent/CH523573A/de not_active IP Right Cessation
- 1970-03-13 NL NLAANVRAGE7003605,A patent/NL170201C/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2037195B1 (nl) | 1974-05-03 |
BE747342A (fr) | 1970-08-17 |
NL170201C (nl) | 1982-10-01 |
NL7003605A (nl) | 1970-09-15 |
FR2037195A1 (nl) | 1970-12-31 |
CH523573A (de) | 1972-05-31 |
DE2011851B2 (de) | 1976-03-25 |
DE2011851C3 (de) | 1981-03-12 |
GB1308711A (en) | 1973-03-07 |
DE2011851A1 (nl) | 1970-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |