GB1305730A - - Google Patents
Info
- Publication number
- GB1305730A GB1305730A GB3543970A GB3543970A GB1305730A GB 1305730 A GB1305730 A GB 1305730A GB 3543970 A GB3543970 A GB 3543970A GB 3543970 A GB3543970 A GB 3543970A GB 1305730 A GB1305730 A GB 1305730A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- polarity
- diode
- supply
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000003455 independent Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
- H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/60—Substation equipment, e.g. for use by subscribers including speech amplifiers
- H04M1/6008—Substation equipment, e.g. for use by subscribers including speech amplifiers in the transmitter circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6916988A NL6916988A (US06371994-20020416-C00029.png) | 1969-11-11 | 1969-11-11 | |
| NL7007313A NL7007313A (US06371994-20020416-C00029.png) | 1969-11-11 | 1970-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1305730A true GB1305730A (US06371994-20020416-C00029.png) | 1973-02-07 |
Family
ID=26644491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3543970A Expired GB1305730A (US06371994-20020416-C00029.png) | 1969-11-11 | 1970-07-22 |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL170901C (nl) * | 1971-04-03 | 1983-01-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| SE351335B (US06371994-20020416-C00029.png) * | 1972-01-05 | 1972-11-20 | Ericsson Telefon Ab L M | |
| DE2718644C2 (de) * | 1977-04-27 | 1979-07-12 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter |
| AU518350B2 (en) * | 1978-11-08 | 1981-09-24 | International Standard Electric Corp. | Bidirectional amplifier |
| IT1212518B (it) * | 1982-01-29 | 1989-11-22 | Ates Componenti Elettron | Circuito raddrizzatore a ponte di transistori, con protezione controle sovracorrenti, per uso telefonico. |
| EP0491217A1 (de) * | 1990-12-19 | 1992-06-24 | Siemens Aktiengesellschaft | Integrierte Transistor-Freilaufdioden-Anordnung |
| DE4333359C2 (de) * | 1993-06-26 | 2002-08-14 | Bosch Gmbh Robert | Monolithisch integrierte Leistungsendstufe |
| KR101825567B1 (ko) * | 2011-08-31 | 2018-02-05 | 삼성전자 주식회사 | 단말장치의 마이크로폰 극성 제어장치 및 방법 |
-
1969
- 1969-11-11 NL NL6916988A patent/NL6916988A/xx unknown
-
1970
- 1970-05-20 NL NL7007313A patent/NL7007313A/xx unknown
- 1970-07-10 DE DE19702034318 patent/DE2034318B2/de active Pending
- 1970-07-10 US US53940A patent/US3665330A/en not_active Expired - Lifetime
- 1970-07-17 DK DK372870AA patent/DK142800B/da not_active IP Right Cessation
- 1970-07-21 JP JP45063292A patent/JPS521244B1/ja active Pending
- 1970-07-22 GB GB3543970A patent/GB1305730A/en not_active Expired
- 1970-07-27 FR FR7027585A patent/FR2071627A5/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6916988A (US06371994-20020416-C00029.png) | 1971-05-13 |
| NL7007313A (US06371994-20020416-C00029.png) | 1971-11-23 |
| FR2071627A5 (US06371994-20020416-C00029.png) | 1971-09-17 |
| DE2034318A1 (de) | 1971-05-19 |
| DK142800B (da) | 1981-01-26 |
| DE2034318B2 (de) | 1972-08-31 |
| US3665330A (en) | 1972-05-23 |
| JPS521244B1 (US06371994-20020416-C00029.png) | 1977-01-13 |
| DK142800C (US06371994-20020416-C00029.png) | 1981-09-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |