GB1297089A - - Google Patents

Info

Publication number
GB1297089A
GB1297089A GB1297089DA GB1297089A GB 1297089 A GB1297089 A GB 1297089A GB 1297089D A GB1297089D A GB 1297089DA GB 1297089 A GB1297089 A GB 1297089A
Authority
GB
United Kingdom
Prior art keywords
emitter
base region
region
field
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1297089A publication Critical patent/GB1297089A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

1297089 Semi-conductor devices SIEMENS AG 19 Jan 1971 [30 Jan 1970] 2678/71 Heading H1K In a transistor amplifier device of semi-conductor material comprising an emitter region 3 with electrode 6, a collector region 4 with electrode 8, and a base region 2 with electrode 7, additional electrodes 15, 16 are provided on the base region so as to produce an electric field in the base region, perpendicular to the emittercollector path, when a potential is applied to the additional electrodes. The field causes impact ionization within the base region, and, in combination with a magnetic field B perpendicular to both the electric field and the emittercollector path enables amplification of high frequency signals applied to the emitter to be achieved. The device may be of a material exhibiting high charge carrier mobility, e.g. indium antimonide, and may be cooled in operation. The resistivity of the emitter region may be greater than that of the base region adjacent thereto to prevent short circuiting of the field in the base region by the emitter, or alternatively the emitter-base junction may be slightly reverse biased for this purpose. In addition, the impurity concentration in the base region may be increased in the region between the emitter and collector regions to increase the field strength therebetween. The device may be operated in the circuit shown, the output being taken across load 13.
GB1297089D 1970-01-30 1971-01-19 Expired GB1297089A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702004345 DE2004345C3 (en) 1970-01-30 1970-01-30 Method of amplifying '"*" "" "" electrical signals and using a transistor to carry them through

Publications (1)

Publication Number Publication Date
GB1297089A true GB1297089A (en) 1972-11-22

Family

ID=5761019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1297089D Expired GB1297089A (en) 1970-01-30 1971-01-19

Country Status (8)

Country Link
JP (1) JPS5418111B1 (en)
AT (1) AT345897B (en)
CH (1) CH524283A (en)
DE (1) DE2004345C3 (en)
FR (1) FR2083047A5 (en)
GB (1) GB1297089A (en)
NL (1) NL7101149A (en)
SE (1) SE370830B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175443A (en) * 1985-05-15 1986-11-26 Philips Electronic Associated Bipolar semiconductor device
EP2048714A1 (en) * 2006-08-03 2009-04-15 Hiroshima University Current amplifying device and current amplifying method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175443A (en) * 1985-05-15 1986-11-26 Philips Electronic Associated Bipolar semiconductor device
EP2048714A1 (en) * 2006-08-03 2009-04-15 Hiroshima University Current amplifying device and current amplifying method
EP2048714A4 (en) * 2006-08-03 2013-01-16 Univ Hiroshima Current amplifying device and current amplifying method

Also Published As

Publication number Publication date
NL7101149A (en) 1971-08-03
DE2004345A1 (en) 1971-08-05
DE2004345B2 (en) 1978-03-09
CH524283A (en) 1972-06-15
JPS5418111B1 (en) 1979-07-05
ATA1067170A (en) 1978-02-15
AT345897B (en) 1978-10-10
SE370830B (en) 1974-10-28
FR2083047A5 (en) 1971-12-10
DE2004345C3 (en) 1978-10-26

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee