GB1290559A - - Google Patents

Info

Publication number
GB1290559A
GB1290559A GB1290559DA GB1290559A GB 1290559 A GB1290559 A GB 1290559A GB 1290559D A GB1290559D A GB 1290559DA GB 1290559 A GB1290559 A GB 1290559A
Authority
GB
United Kingdom
Prior art keywords
region
silicon
gold
cathode
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691960424 external-priority patent/DE1960424C3/de
Application filed filed Critical
Publication of GB1290559A publication Critical patent/GB1290559A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB1290559D 1969-12-02 1970-12-02 Expired GB1290559A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691960424 DE1960424C3 (de) 1969-12-02 Thyristor mit mindestens vier Zonen abwechselnd entgegengesetzten Leitungstyps und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
GB1290559A true GB1290559A (cg-RX-API-DMAC10.html) 1972-09-27

Family

ID=5752717

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1290559D Expired GB1290559A (cg-RX-API-DMAC10.html) 1969-12-02 1970-12-02

Country Status (5)

Country Link
US (1) US3634739A (cg-RX-API-DMAC10.html)
BE (1) BE759754A (cg-RX-API-DMAC10.html)
FR (1) FR2070228B1 (cg-RX-API-DMAC10.html)
GB (1) GB1290559A (cg-RX-API-DMAC10.html)
SE (1) SE403677B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9646464B2 (en) 2012-06-07 2017-05-09 Aristocrat Technologies Australia Pty Limited Gaming system and a method of gaming

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918279A (cg-RX-API-DMAC10.html) * 1972-06-08 1974-02-18
GB1425651A (en) * 1972-04-03 1976-02-18 Motorola Inc Channel firing thyristor
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device
CH578254A5 (cg-RX-API-DMAC10.html) * 1974-12-03 1976-07-30 Bbc Brown Boveri & Cie
US4080620A (en) * 1975-11-17 1978-03-21 Westinghouse Electric Corporation Reverse switching rectifier and method for making same
FR2451106A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Dispositif semi-conducteur de commutation a frequence elevee
DE3856173D1 (de) * 1987-10-21 1998-06-10 Siemens Ag Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US8222671B2 (en) * 2006-03-21 2012-07-17 Cambridge Enterprises Limited Power semiconductor devices
CN101931001B (zh) * 2009-06-24 2012-05-30 湖北台基半导体股份有限公司 一种非对称快速晶闸管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
NL294340A (cg-RX-API-DMAC10.html) * 1962-07-27 1900-01-01
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
FR1440630A (fr) * 1963-10-26 1966-06-03 Siemens Ag élément semiconducteur du type pnpn et le procédé de sa fabrication
DE1514151A1 (de) * 1965-08-09 1969-06-19 Licentia Gmbh Thyristorstruktur
GB1222087A (en) * 1967-07-10 1971-02-10 Lucas Industries Ltd Thyristors
GB1172772A (en) * 1967-07-20 1969-12-03 Westinghouse Brake & Signal Semiconductor Devices.
FR96277E (fr) * 1967-10-12 1972-06-16 Gen Electric Perfectionnements aux dispositifs a semiconducteur.
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9646464B2 (en) 2012-06-07 2017-05-09 Aristocrat Technologies Australia Pty Limited Gaming system and a method of gaming
US9928693B2 (en) 2012-06-07 2018-03-27 Aristocrat Technologies Australian Pty Limited Gaming system and a method of gaming

Also Published As

Publication number Publication date
DE1960424A1 (de) 1971-06-16
SE403677B (sv) 1978-08-28
BE759754A (fr) 1971-05-17
US3634739A (en) 1972-01-11
DE1960424B2 (de) 1975-11-13
FR2070228B1 (cg-RX-API-DMAC10.html) 1978-08-11
FR2070228A1 (cg-RX-API-DMAC10.html) 1971-09-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee