GB1222087A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1222087A
GB1222087A GB3162967A GB3162967A GB1222087A GB 1222087 A GB1222087 A GB 1222087A GB 3162967 A GB3162967 A GB 3162967A GB 3162967 A GB3162967 A GB 3162967A GB 1222087 A GB1222087 A GB 1222087A
Authority
GB
United Kingdom
Prior art keywords
gate
oxide
diborane
wafer
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3162967A
Inventor
Michael Albert Stacey
Michael Murray Bertioli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to GB3162967A priority Critical patent/GB1222087A/en
Priority to FR1592551D priority patent/FR1592551A/fr
Priority to DE19681764633 priority patent/DE1764633A1/en
Priority to NL6809770A priority patent/NL6809770A/xx
Publication of GB1222087A publication Critical patent/GB1222087A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

1,222,087. Thyristors. JOSEPH LUCAS (INDUSTRIES) Ltd. 5 July, 1968 [10 July, 1967], No. 31629/67. Heading HlK. A thyristor is made by placing a P-type silicon wafer, to form the anode, in a non- oxidizing atmosphere in a heated furnace, depositing donor doped silicon from a gaseous mixture to form a base layer and then changing the impurity in the mixture and growing a gate layer, and finally forming a cathode region in the gate layer by diffusion after removal from the furnace. In the example a wafer of 0.01 ohm cm. resistivity is etched in a gaseous hydrogen chloride-hydrogen mix immediately prior to deposition, which is effected from a mixture of silane and hydrogen with phosphine and diborane added to form the base and gate, respectively, the concentration of diborane being increased at the end of deposition to provide a P + surface to the gate. At this stage the wafer is oxide coated by replacing the diborane with nitric oxide and holes photolithographically formed in the oxide (15) overlying the gate. Phosphorus is diffused through these to form a group of cathode regions (17, Fig. 6) for each device. Gate and cathode contacts are made through apertures formed in the oxide and grooves etched down to the anode layer to isolate single device configurations which are then separated by scribing and breaking. The resistivities and thicknesses of the various layers and sub-layers in two exemplary devices are given.
GB3162967A 1967-07-10 1967-07-10 Thyristors Expired GB1222087A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB3162967A GB1222087A (en) 1967-07-10 1967-07-10 Thyristors
FR1592551D FR1592551A (en) 1967-07-10 1968-07-09
DE19681764633 DE1764633A1 (en) 1967-07-10 1968-07-09 Thyristor
NL6809770A NL6809770A (en) 1967-07-10 1968-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3162967A GB1222087A (en) 1967-07-10 1967-07-10 Thyristors

Publications (1)

Publication Number Publication Date
GB1222087A true GB1222087A (en) 1971-02-10

Family

ID=10326033

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3162967A Expired GB1222087A (en) 1967-07-10 1967-07-10 Thyristors

Country Status (4)

Country Link
DE (1) DE1764633A1 (en)
FR (1) FR1592551A (en)
GB (1) GB1222087A (en)
NL (1) NL6809770A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701696A (en) * 1969-08-20 1972-10-31 Gen Electric Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
BE759754A (en) * 1969-12-02 1971-05-17 Licentia Gmbh THYRISTOR WITH SHORT-CIRCUIT TRANSMITTER ON ONE OF THE MAIN FACES BUT THYRISTOR DISC AND THYRISTOR PRODUCTION PROCESS

Also Published As

Publication number Publication date
DE1764633A1 (en) 1972-02-17
NL6809770A (en) 1969-01-14
FR1592551A (en) 1970-05-19

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