GB1289650A - - Google Patents
Info
- Publication number
- GB1289650A GB1289650A GB1289650DA GB1289650A GB 1289650 A GB1289650 A GB 1289650A GB 1289650D A GB1289650D A GB 1289650DA GB 1289650 A GB1289650 A GB 1289650A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- dopant
- type
- ion
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44073848A JPS4831514B1 (enrdf_load_stackoverflow) | 1969-09-18 | 1969-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1289650A true GB1289650A (enrdf_load_stackoverflow) | 1972-09-20 |
Family
ID=13529961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1289650D Expired GB1289650A (enrdf_load_stackoverflow) | 1969-09-18 | 1970-04-23 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS4831514B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1289650A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4984589A (enrdf_load_stackoverflow) * | 1972-12-19 | 1974-08-14 | ||
| JPS5046081A (enrdf_load_stackoverflow) * | 1973-08-28 | 1975-04-24 | ||
| DE2703877A1 (de) * | 1977-01-31 | 1978-08-03 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
-
1969
- 1969-09-18 JP JP44073848A patent/JPS4831514B1/ja active Pending
-
1970
- 1970-04-23 GB GB1289650D patent/GB1289650A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4984589A (enrdf_load_stackoverflow) * | 1972-12-19 | 1974-08-14 | ||
| JPS5046081A (enrdf_load_stackoverflow) * | 1973-08-28 | 1975-04-24 | ||
| DE2703877A1 (de) * | 1977-01-31 | 1978-08-03 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4831514B1 (enrdf_load_stackoverflow) | 1973-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES385638A1 (es) | Un metodo de fabricar un componente electrico. | |
| GB1357515A (en) | Method for manufacturing an mos integrated circuit | |
| US3607449A (en) | Method of forming a junction by ion implantation | |
| GB1457169A (en) | Method for fabricating semiconductor devices using composite mask and ion implantation | |
| GB1417055A (en) | Thin-layer complementary-channel mos circuits | |
| JPS5766674A (en) | Semiconductor device | |
| GB1067926A (en) | Improvements in or relating to semiconductors | |
| GB1233545A (enrdf_load_stackoverflow) | ||
| GB1335813A (en) | Transistor and method of manufacturing the same | |
| JPS5425171A (en) | Manufacture of field effect semiconductor device | |
| GB1424959A (en) | Manufacuture of semiconductor devices | |
| GB1289650A (enrdf_load_stackoverflow) | ||
| JPS5316581A (en) | Insulated gate type field effect transistor | |
| GB1478003A (en) | Semiconductor devices | |
| JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
| JPS57188877A (en) | Semiconductor device and manufacture thereof | |
| GB1287473A (en) | A method of producing a planar transistor | |
| JPS56138920A (en) | Method of selection and diffusion for impurities | |
| JPS5469388A (en) | Junction type field effect semiconductor device and its production | |
| JPS6472523A (en) | Manufacture of semiconductor device | |
| JPS561572A (en) | Manufacture of semiconductor device | |
| JPS5365080A (en) | Production of insulated gate type semiconductor device | |
| JPS5268383A (en) | Manufacture of semiconductor device | |
| JPS57204170A (en) | Manufacture of mos type field effect transistor | |
| JPS5419377A (en) | Production of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |