GB1289650A - - Google Patents

Info

Publication number
GB1289650A
GB1289650A GB1289650DA GB1289650A GB 1289650 A GB1289650 A GB 1289650A GB 1289650D A GB1289650D A GB 1289650DA GB 1289650 A GB1289650 A GB 1289650A
Authority
GB
United Kingdom
Prior art keywords
region
dopant
type
ion
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1289650A publication Critical patent/GB1289650A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1289650 Semi-conductor devices KOGYO GIJUTSUIN 23 April 1970 [18 Sept 1969] 19576/70 Heading H1K The channel region 15a of an IGFET is formed by lateral thermal diffusion of dopant atoms from an ion implanted region. In the device shown the P type channel region 15a is part of a region 15 formed in this way in an N type drain region 12 on an N+ type layer 11. The N type source region 16 is formed by thermal diffusion into the region 15 through the metal mask 14 used to define the initial ionimplanted region which acts as the dopant source for the region 15. Control of the ion energy enables the depth of the part 15b of the region 15 to be controlled independently of the channelwidth of the part 15a. In a modification the dopant for both the region 15 and the region 16 is ion-implanted into the region 12 through the same aperture in the mask 14, and during the subsequent thermal, diffusion process the dopant for the region 15 diffuses faster than that for the region 16, thus providing the necessary channel region 15a.
GB1289650D 1969-09-18 1970-04-23 Expired GB1289650A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44073848A JPS4831514B1 (en) 1969-09-18 1969-09-18

Publications (1)

Publication Number Publication Date
GB1289650A true GB1289650A (en) 1972-09-20

Family

ID=13529961

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1289650D Expired GB1289650A (en) 1969-09-18 1970-04-23

Country Status (2)

Country Link
JP (1) JPS4831514B1 (en)
GB (1) GB1289650A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4984589A (en) * 1972-12-19 1974-08-14
JPS5046081A (en) * 1973-08-28 1975-04-24
DE2703877A1 (en) * 1977-01-31 1978-08-03 Siemens Ag MIS FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4984589A (en) * 1972-12-19 1974-08-14
JPS5615147B2 (en) * 1972-12-19 1981-04-08
JPS5046081A (en) * 1973-08-28 1975-04-24
DE2703877A1 (en) * 1977-01-31 1978-08-03 Siemens Ag MIS FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH

Also Published As

Publication number Publication date
JPS4831514B1 (en) 1973-09-29

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee