GB1288359A - Switching circuit - Google Patents

Switching circuit

Info

Publication number
GB1288359A
GB1288359A GB2386871A GB2386871A GB1288359A GB 1288359 A GB1288359 A GB 1288359A GB 2386871 A GB2386871 A GB 2386871A GB 2386871 A GB2386871 A GB 2386871A GB 1288359 A GB1288359 A GB 1288359A
Authority
GB
United Kingdom
Prior art keywords
diode
scr
gate
contact
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2386871A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702012173 external-priority patent/DE2012173C/de
Application filed filed Critical
Publication of GB1288359A publication Critical patent/GB1288359A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676Combinations of only thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
GB2386871A 1970-03-14 1971-04-19 Switching circuit Expired GB1288359A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012173 DE2012173C (de) 1970-03-14 Monolithisch integrierbare Schaltung zum Schalten eines vierschichtigen Halbleiterelementes

Publications (1)

Publication Number Publication Date
GB1288359A true GB1288359A (en) 1972-09-06

Family

ID=5765086

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2386871A Expired GB1288359A (en) 1970-03-14 1971-04-19 Switching circuit

Country Status (3)

Country Link
JP (1) JPS462872A (enrdf_load_stackoverflow)
FR (1) FR2081946B1 (enrdf_load_stackoverflow)
GB (1) GB1288359A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815965U (ja) * 1981-07-24 1983-01-31 日産自動車株式会社 車両用リレ−装置
JPH0242343U (enrdf_load_stackoverflow) * 1988-09-14 1990-03-23
FR2751789B1 (fr) * 1996-07-26 1998-10-23 Sgs Thomson Microelectronics Composant monolithique associant un composant haute tension et des composants logiques

Also Published As

Publication number Publication date
FR2081946B1 (enrdf_load_stackoverflow) 1975-07-04
DE2012173A1 (de) 1971-10-14
FR2081946A1 (enrdf_load_stackoverflow) 1971-12-10
DE2012173B2 (de) 1972-09-07
JPS462872A (enrdf_load_stackoverflow) 1971-10-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees