FR2081946A1 - - Google Patents

Info

Publication number
FR2081946A1
FR2081946A1 FR7108667A FR7108667A FR2081946A1 FR 2081946 A1 FR2081946 A1 FR 2081946A1 FR 7108667 A FR7108667 A FR 7108667A FR 7108667 A FR7108667 A FR 7108667A FR 2081946 A1 FR2081946 A1 FR 2081946A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7108667A
Other languages
French (fr)
Other versions
FR2081946B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702012173 external-priority patent/DE2012173C/de
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2081946A1 publication Critical patent/FR2081946A1/fr
Application granted granted Critical
Publication of FR2081946B1 publication Critical patent/FR2081946B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
FR7108667A 1970-03-14 1971-03-12 Expired FR2081946B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012173 DE2012173C (de) 1970-03-14 Monolithisch integrierbare Schaltung zum Schalten eines vierschichtigen Halbleiterelementes

Publications (2)

Publication Number Publication Date
FR2081946A1 true FR2081946A1 (enrdf_load_stackoverflow) 1971-12-10
FR2081946B1 FR2081946B1 (enrdf_load_stackoverflow) 1975-07-04

Family

ID=5765086

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7108667A Expired FR2081946B1 (enrdf_load_stackoverflow) 1970-03-14 1971-03-12

Country Status (3)

Country Link
JP (1) JPS462872A (enrdf_load_stackoverflow)
FR (1) FR2081946B1 (enrdf_load_stackoverflow)
GB (1) GB1288359A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0821410A1 (fr) * 1996-07-26 1998-01-28 STMicroelectronics S.A. Composant monolithique associant un composant haute tension et des composants logiques

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815965U (ja) * 1981-07-24 1983-01-31 日産自動車株式会社 車両用リレ−装置
JPH0242343U (enrdf_load_stackoverflow) * 1988-09-14 1990-03-23

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0821410A1 (fr) * 1996-07-26 1998-01-28 STMicroelectronics S.A. Composant monolithique associant un composant haute tension et des composants logiques
FR2751789A1 (fr) * 1996-07-26 1998-01-30 Sgs Thomson Microelectronics Composant monolithique associant un composant haute tension et des composants logiques

Also Published As

Publication number Publication date
FR2081946B1 (enrdf_load_stackoverflow) 1975-07-04
DE2012173A1 (de) 1971-10-14
DE2012173B2 (de) 1972-09-07
JPS462872A (enrdf_load_stackoverflow) 1971-10-22
GB1288359A (en) 1972-09-06

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Legal Events

Date Code Title Description
ST Notification of lapse