GB1287930A - - Google Patents

Info

Publication number
GB1287930A
GB1287930A GB6348769A GB6348769A GB1287930A GB 1287930 A GB1287930 A GB 1287930A GB 6348769 A GB6348769 A GB 6348769A GB 6348769 A GB6348769 A GB 6348769A GB 1287930 A GB1287930 A GB 1287930A
Authority
GB
United Kingdom
Prior art keywords
layer
electrodes
thermistor material
deposited
auxiliary electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6348769A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1287930A publication Critical patent/GB1287930A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Abstract

1287930 Thermistors PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 31 Dec 1969 [31 Dec 1968] 63487/69 Heading H1K A thermistor comprises a layer consisting of one or more transition metal oxides formed by cathode sputtering having two spaced electrodes on one face, and an auxiliary electrode layer on the opposite face extending over an area which overlaps the two other electrodes, external connections being made to the two electrodes on the one face. As shown, Fig. 2, a Ge substrate 30 is provided with an insulating layer 31 of silica or alumina on which is deposited a Ni-Cr layer covered with a thicker Ni layer to form an auxiliary electrode layer 32, a layer 33 of thermistor material is deposited by sputtering through a mask, a layer of Ni-Cr is deposited over the surface, photomasked and etched to form two electrodes, 34, 33, to which external connections (not shown) are applied. The structure forms two thermistors connected in series by the auxiliary electrode 32, the current path through the thermistor material being perpendicular to its major surfaces. The upper electrodes 34, 35 extend on to the insulating layer 31 to provide contact pads, Fig. I (not shown). If the substrate is a conductive material which forms an ohmic contact with the thermistor material it may be utilized as the auxiliary electrode. A plurality of thermistors may be formed in a single layer of thermistor material, Figs. 3 and 4 (not shown), by depositing Ni-Cr and Ni layers on a glass substrate (70), photomasking and etching to form a plurality of auxiliary electrodes (71 to 74), depositing a layer (75) of thermistor material over the substrate, vapour depositing Ni-Cr and Ni layers, and photomasking and etching to form two electrodes (76, 77, 78, 79, 80, 81; 82, 83) overlying each of the auxiliary electrodes (71, 72, 73, 74, respectively). The metals Mn; Fe, Co and Ni are mentioned as transition metals whose oxides may be used for the thermistor material which may be deposited by sputtering using a mixed oxide target or by reactive sputtering of the metals in an oxidizing atmosphere.
GB6348769A 1968-12-31 1969-12-31 Expired GB1287930A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR182982 1968-12-31

Publications (1)

Publication Number Publication Date
GB1287930A true GB1287930A (en) 1972-09-06

Family

ID=8659866

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6348769A Expired GB1287930A (en) 1968-12-31 1969-12-31

Country Status (3)

Country Link
DE (1) DE2000099A1 (en)
FR (1) FR1602247A (en)
GB (1) GB1287930A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150748A (en) * 1983-12-03 1985-07-03 Standard Telephones Cables Ltd Thin film negative temperature coefficient resistor structures
WO1989012309A1 (en) * 1988-06-08 1989-12-14 Astra Meditec Ab Thermistor intended primarily for temperature measurement and procedure for manufacture of a thermistor
DE19835443C2 (en) * 1997-08-07 2003-03-06 Murata Manufacturing Co Chip thermistor and method for setting a chip thermistor
EP2472529A4 (en) * 2009-08-28 2016-04-27 Murata Manufacturing Co Thermistor and method for producing same
EP3073496A1 (en) * 2015-03-27 2016-09-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device with heat-sensitive resistance
US10056542B2 (en) 2015-03-24 2018-08-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Piezoelectric device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200970A (en) * 1977-04-14 1980-05-06 Milton Schonberger Method of adjusting resistance of a thermistor
DE3917569A1 (en) * 1989-05-30 1990-12-06 Siemens Ag Large surface heating e.g. for vehicle mirror - using PTC resistance element that is bonded directly to elements of heated mirror

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150748A (en) * 1983-12-03 1985-07-03 Standard Telephones Cables Ltd Thin film negative temperature coefficient resistor structures
WO1989012309A1 (en) * 1988-06-08 1989-12-14 Astra Meditec Ab Thermistor intended primarily for temperature measurement and procedure for manufacture of a thermistor
AU622192B2 (en) * 1988-06-08 1992-04-02 A.B. Astra Meditec Thermistor intended primarily for temperature measurement and procedure for manufacture of a thermistor
US5432375A (en) * 1988-06-08 1995-07-11 Astra Tech Aktiebolag Thermistor intended primarily for temperature measurement
DE19835443C2 (en) * 1997-08-07 2003-03-06 Murata Manufacturing Co Chip thermistor and method for setting a chip thermistor
US6606783B1 (en) 1997-08-07 2003-08-19 Murata Manufacturing Co., Ltd. Method of producing chip thermistors
EP2472529A4 (en) * 2009-08-28 2016-04-27 Murata Manufacturing Co Thermistor and method for producing same
US10056542B2 (en) 2015-03-24 2018-08-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Piezoelectric device
EP3073496A1 (en) * 2015-03-27 2016-09-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device with heat-sensitive resistance
FR3034248A1 (en) * 2015-03-27 2016-09-30 Commissariat Energie Atomique THERMOSENSITIVE RESISTANCE DEVICE
US10072989B2 (en) 2015-03-27 2018-09-11 Commissariat à I'Energie Atomique et aux Energies Alternatives Heat-sensitive resistance device

Also Published As

Publication number Publication date
DE2000099A1 (en) 1970-07-16
FR1602247A (en) 1970-10-26

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees