GB1282168A - Method of vapour growing ternary epitaxial films - Google Patents

Method of vapour growing ternary epitaxial films

Info

Publication number
GB1282168A
GB1282168A GB43734/69A GB4373469A GB1282168A GB 1282168 A GB1282168 A GB 1282168A GB 43734/69 A GB43734/69 A GB 43734/69A GB 4373469 A GB4373469 A GB 4373469A GB 1282168 A GB1282168 A GB 1282168A
Authority
GB
United Kingdom
Prior art keywords
vapours
substrate
source
sept
furnaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43734/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1282168A publication Critical patent/GB1282168A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/54—Accessories
    • G03B21/64—Means for mounting individual pictures to be projected, e.g. frame for transparency
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB43734/69A 1968-09-27 1969-09-04 Method of vapour growing ternary epitaxial films Expired GB1282168A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76314768A 1968-09-27 1968-09-27

Publications (1)

Publication Number Publication Date
GB1282168A true GB1282168A (en) 1972-07-19

Family

ID=25067001

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43734/69A Expired GB1282168A (en) 1968-09-27 1969-09-04 Method of vapour growing ternary epitaxial films

Country Status (5)

Country Link
US (1) US3619282A (enrdf_load_stackoverflow)
JP (1) JPS4949310B1 (enrdf_load_stackoverflow)
CA (1) CA918548A (enrdf_load_stackoverflow)
FR (1) FR2018988A1 (enrdf_load_stackoverflow)
GB (1) GB1282168A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779803A (en) * 1969-11-17 1973-12-18 Ibm Infrared sensitive semiconductor device and method of manufacture
US3884788A (en) * 1973-08-30 1975-05-20 Honeywell Inc Substrate preparation for liquid phase epitaxy of mercury cadmium telluride
JPS512828A (enrdf_load_stackoverflow) * 1974-06-26 1976-01-10 Matsushita Electric Ind Co Ltd
US3987772A (en) * 1975-03-10 1976-10-26 Texas Instruments Incorporated Self-regulating heater
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4107515A (en) * 1976-09-09 1978-08-15 Texas Instruments Incorporated Compact PTC resistor
JPS5541505U (enrdf_load_stackoverflow) * 1978-09-08 1980-03-17
JPS5954739U (ja) * 1982-10-01 1984-04-10 トヨタ自動車株式会社 内燃機関の吸気加熱装置
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
FR2599558B1 (fr) * 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US4950358A (en) * 1986-07-07 1990-08-21 Santa Barbara Research Center Vapor phase epitaxy of semiconductor material in a quasi-open system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1233833B (de) * 1961-03-27 1967-02-09 Philips Nv Verfahren zur Herstellung eines Einkristalls, insbesondere Halbleitereinkristalls
NL279828A (enrdf_load_stackoverflow) * 1961-07-05
FR1447257A (fr) * 1965-05-25 1966-07-29 Centre Nat Rech Scient Procédé pour effectuer des dépôts de matériaux volatils par croissance cristalline sur des supports solides
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors

Also Published As

Publication number Publication date
DE1944985A1 (de) 1970-05-27
JPS4949310B1 (enrdf_load_stackoverflow) 1974-12-26
CA918548A (en) 1973-01-09
DE1944985B2 (de) 1972-10-26
FR2018988A1 (enrdf_load_stackoverflow) 1970-06-26
US3619282A (en) 1971-11-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee