GB1031835A - Improvements in and relating to methods of manufacturing semi-conductor bodies of silicon carbide - Google Patents

Improvements in and relating to methods of manufacturing semi-conductor bodies of silicon carbide

Info

Publication number
GB1031835A
GB1031835A GB2215763A GB2215763A GB1031835A GB 1031835 A GB1031835 A GB 1031835A GB 2215763 A GB2215763 A GB 2215763A GB 2215763 A GB2215763 A GB 2215763A GB 1031835 A GB1031835 A GB 1031835A
Authority
GB
United Kingdom
Prior art keywords
silicon carbide
deposited
substratum
aluminium
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2215763A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1031835A publication Critical patent/GB1031835A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)

Abstract

1,031,835. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. June 4, 1963 [June 6, 1962], No. 22157/63. Heading H1K. In a method of producing a silicon carbide body with a PN junction, extrinsic material of one conductivity type is deposited on a substratum of silicon carbide material of the opposite conductivity type and the combined total of the concentrations of donor impurities in both deposited and substratum regions is equal to, or greater than (if the substratum is N-type) or less than (if it is P-type) the combined total of the concentrations of acceptor impurities. This ensures that any movement due to diffusion effect, of the PN junction which exists initially at the interface between substratum and deposited regions is such that the junction moves into the deposited region and not into the substratum region where it might reach the outer edge and so be eliminated. Fig. 17 shows a section of a silicon carbide crystal in which 96 shows the boundary between the P-type substratum 93 and the newly deposited material and the PN junction 95 which has been shifted into the deposited region due to diffusion during the deposition process. A thin intrinsic region may exist between the P and N regions. Fig. 13 shows an apparatus for producing such crystals. Lumps of silicon carbide 62 are placed in a graphite vessel 61 to leave a central chamber 83 in which silicon carbide crystals are deposited when the material is heated to 2000‹ C. Aluminium and nitrogen are used as acceptor and donor impurities. Aluminium carbide may be placed around support 64, and a flow of argon supplied via pipe 82; heating is effected by means of copper electrodes 78 with cooling ducts 79, connected to carbon oven 77. The process results in the deposition of P-type silicon carbide crystals containing 7 x 10<SP>18</SP> atoms per c.c. of aluminium. After 4 hours heating, nitrogen is added to the argon so that the silicon carbide material then deposited contains 14 x 10<SP>18</SP> atoms per c.c. of nitrogen in addition to the aluminium. The combined total of donor concentrations thus equals the combined total of acceptor concentrations and under these conditions the PN junction tends to remain stationary at the original boundary (i.e. where the nitrogen was introduced) in spite of subsequent diffusion effects. In a further example, aluminium chloride added to the argon was used to provide the aluminium impurity. Deposition may alternatively be effected from a melt or by evaporation, sublimation, thermal decomposition or reaction.
GB2215763A 1962-06-06 1963-06-04 Improvements in and relating to methods of manufacturing semi-conductor bodies of silicon carbide Expired GB1031835A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL279389 1962-06-06

Publications (1)

Publication Number Publication Date
GB1031835A true GB1031835A (en) 1966-06-02

Family

ID=19753884

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2215763A Expired GB1031835A (en) 1962-06-06 1963-06-04 Improvements in and relating to methods of manufacturing semi-conductor bodies of silicon carbide

Country Status (7)

Country Link
BE (1) BE633263A (en)
CH (1) CH415566A (en)
DE (1) DE1298191B (en)
ES (1) ES288688A1 (en)
GB (1) GB1031835A (en)
NL (1) NL279389A (en)
SE (1) SE310911B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006113657A1 (en) * 2005-04-19 2006-10-26 Ii-Vi Incorporated Method of and system for forming sic crystals having spatially uniform doping impurities

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en) * 1951-03-07 1900-01-01
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
FR1291471A (en) * 1960-06-13 1962-04-20 Siemens Ag Method of manufacturing a semiconductor device
NL275313A (en) * 1961-05-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006113657A1 (en) * 2005-04-19 2006-10-26 Ii-Vi Incorporated Method of and system for forming sic crystals having spatially uniform doping impurities
US7608524B2 (en) 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
US8216369B2 (en) 2005-04-19 2012-07-10 Ii-Vi Incorporated System for forming SiC crystals having spatially uniform doping impurities

Also Published As

Publication number Publication date
ES288688A1 (en) 1963-07-16
DE1298191B (en) 1969-06-26
SE310911B (en) 1969-05-19
CH415566A (en) 1966-06-30
BE633263A (en)
NL279389A (en)

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