GB1280689A - Improvements in or relating to current controlling devices - Google Patents

Improvements in or relating to current controlling devices

Info

Publication number
GB1280689A
GB1280689A GB38865/69A GB3886569A GB1280689A GB 1280689 A GB1280689 A GB 1280689A GB 38865/69 A GB38865/69 A GB 38865/69A GB 3886569 A GB3886569 A GB 3886569A GB 1280689 A GB1280689 A GB 1280689A
Authority
GB
United Kingdom
Prior art keywords
sias
resistance state
aug
returns
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38865/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of GB1280689A publication Critical patent/GB1280689A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB38865/69A 1968-08-22 1969-08-04 Improvements in or relating to current controlling devices Expired GB1280689A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75453368A 1968-08-22 1968-08-22

Publications (1)

Publication Number Publication Date
GB1280689A true GB1280689A (en) 1972-07-05

Family

ID=25035211

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38865/69A Expired GB1280689A (en) 1968-08-22 1969-08-04 Improvements in or relating to current controlling devices

Country Status (9)

Country Link
US (1) US3571673A (cg-RX-API-DMAC10.html)
BE (1) BE737612A (cg-RX-API-DMAC10.html)
DE (1) DE1939280A1 (cg-RX-API-DMAC10.html)
FR (1) FR2016174B1 (cg-RX-API-DMAC10.html)
GB (1) GB1280689A (cg-RX-API-DMAC10.html)
IL (1) IL32582A (cg-RX-API-DMAC10.html)
NL (1) NL6912470A (cg-RX-API-DMAC10.html)
RO (1) RO59767A (cg-RX-API-DMAC10.html)
SE (1) SE359402B (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656029A (en) * 1970-12-31 1972-04-11 Ibm BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor
US4064757A (en) * 1976-10-18 1977-12-27 Allied Chemical Corporation Glassy metal alloy temperature sensing elements for resistance thermometers
EP0095283A3 (en) * 1982-05-15 1984-12-27 The British Petroleum Company p.l.c. Memory device
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
WO1992013359A1 (en) * 1991-01-17 1992-08-06 Crosspoint Solutions, Inc. An improved antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5233217A (en) * 1991-05-03 1993-08-03 Crosspoint Solutions Plug contact with antifuse
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US7038935B2 (en) * 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
CN102751319B (zh) * 2012-07-04 2015-04-15 中国科学院上海微系统与信息技术研究所 基于硫系化合物的浪涌保护器件及其制备方法
CN102923676B (zh) * 2012-10-25 2014-10-15 中国科学院上海微系统与信息技术研究所 一种适用于浪涌保护器件的硫系化合物薄膜材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device
DE1213076B (de) * 1964-07-04 1966-03-24 Danfoss As Elektronisches Festkoerperbauelement zum Schalten
DE1266894B (de) * 1965-03-03 1968-04-25 Danfoss As Sperrschichtfreies Halbleiterschaltelement
US3409400A (en) * 1967-03-10 1968-11-05 Du Pont Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus

Also Published As

Publication number Publication date
IL32582A0 (en) 1969-09-25
NL6912470A (cg-RX-API-DMAC10.html) 1970-02-24
RO59767A (cg-RX-API-DMAC10.html) 1976-06-15
DE1939280A1 (de) 1970-02-26
SE359402B (cg-RX-API-DMAC10.html) 1973-08-27
FR2016174B1 (cg-RX-API-DMAC10.html) 1974-06-14
US3571673A (en) 1971-03-23
FR2016174A1 (cg-RX-API-DMAC10.html) 1970-05-08
IL32582A (en) 1973-05-31
BE737612A (cg-RX-API-DMAC10.html) 1970-02-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee