FR2016174B1 - - Google Patents

Info

Publication number
FR2016174B1
FR2016174B1 FR696928620A FR6928620A FR2016174B1 FR 2016174 B1 FR2016174 B1 FR 2016174B1 FR 696928620 A FR696928620 A FR 696928620A FR 6928620 A FR6928620 A FR 6928620A FR 2016174 B1 FR2016174 B1 FR 2016174B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR696928620A
Other versions
FR2016174A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2016174A1 publication Critical patent/FR2016174A1/fr
Application granted granted Critical
Publication of FR2016174B1 publication Critical patent/FR2016174B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
FR696928620A 1968-08-22 1969-08-20 Expired FR2016174B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75453368A 1968-08-22 1968-08-22

Publications (2)

Publication Number Publication Date
FR2016174A1 FR2016174A1 (fr) 1970-05-08
FR2016174B1 true FR2016174B1 (fr) 1974-06-14

Family

ID=25035211

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696928620A Expired FR2016174B1 (fr) 1968-08-22 1969-08-20

Country Status (9)

Country Link
US (1) US3571673A (fr)
BE (1) BE737612A (fr)
DE (1) DE1939280A1 (fr)
FR (1) FR2016174B1 (fr)
GB (1) GB1280689A (fr)
IL (1) IL32582A (fr)
NL (1) NL6912470A (fr)
RO (1) RO59767A (fr)
SE (1) SE359402B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656029A (en) * 1970-12-31 1972-04-11 Ibm BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor
US4064757A (en) * 1976-10-18 1977-12-27 Allied Chemical Corporation Glassy metal alloy temperature sensing elements for resistance thermometers
EP0095283A3 (fr) * 1982-05-15 1984-12-27 The British Petroleum Company p.l.c. Dispositif de mémoire
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
JPH06505368A (ja) * 1991-01-17 1994-06-16 クロスポイント・ソルーションズ・インコーポレイテッド フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5233217A (en) * 1991-05-03 1993-08-03 Crosspoint Solutions Plug contact with antifuse
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US7038935B2 (en) * 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
CN102751319B (zh) * 2012-07-04 2015-04-15 中国科学院上海微系统与信息技术研究所 基于硫系化合物的浪涌保护器件及其制备方法
CN102923676B (zh) * 2012-10-25 2014-10-15 中国科学院上海微系统与信息技术研究所 一种适用于浪涌保护器件的硫系化合物薄膜材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1060505A (en) * 1964-03-25 1967-03-01 Nippon Telegraph & Telephone Improvements in or relating to semiconductor devices
DE1213076B (de) * 1964-07-04 1966-03-24 Danfoss As Elektronisches Festkoerperbauelement zum Schalten
DE1266894B (de) * 1965-03-03 1968-04-25 Danfoss As Sperrschichtfreies Halbleiterschaltelement
US3409400A (en) * 1967-03-10 1968-11-05 Du Pont Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus

Also Published As

Publication number Publication date
US3571673A (en) 1971-03-23
IL32582A0 (en) 1969-09-25
DE1939280A1 (de) 1970-02-26
GB1280689A (en) 1972-07-05
BE737612A (fr) 1970-02-02
SE359402B (fr) 1973-08-27
RO59767A (fr) 1976-06-15
IL32582A (en) 1973-05-31
FR2016174A1 (fr) 1970-05-08
NL6912470A (fr) 1970-02-24

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Legal Events

Date Code Title Description
ST Notification of lapse