JPS5382699A - Semi-insulating gallium arsenide single crystal - Google Patents

Semi-insulating gallium arsenide single crystal

Info

Publication number
JPS5382699A
JPS5382699A JP15913076A JP15913076A JPS5382699A JP S5382699 A JPS5382699 A JP S5382699A JP 15913076 A JP15913076 A JP 15913076A JP 15913076 A JP15913076 A JP 15913076A JP S5382699 A JPS5382699 A JP S5382699A
Authority
JP
Japan
Prior art keywords
semi
single crystal
gallium arsenide
value
insulating gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15913076A
Other languages
Japanese (ja)
Other versions
JPS5929557B2 (en
Inventor
Shinichi Akai
Yasuhiro Nishida
Keiichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15913076A priority Critical patent/JPS5929557B2/en
Publication of JPS5382699A publication Critical patent/JPS5382699A/en
Publication of JPS5929557B2 publication Critical patent/JPS5929557B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: Stable titled single crystals which may maintain high electrical specific resistance even under photo-radiation, obtd. by containing oxygen with Ndd value more than a fixed value, Si with Nd value less than a fixed value, one or more than one Te, Sn, Se and S in such a way to satisfy the first relative equation and Cr with Naa within a fixed range in such a way to satisfy the second relative equation.
COPYRIGHT: (C)1978,JPO&Japio
JP15913076A 1976-12-28 1976-12-28 Semi-insulating gallium arsenide single crystal Expired JPS5929557B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15913076A JPS5929557B2 (en) 1976-12-28 1976-12-28 Semi-insulating gallium arsenide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15913076A JPS5929557B2 (en) 1976-12-28 1976-12-28 Semi-insulating gallium arsenide single crystal

Publications (2)

Publication Number Publication Date
JPS5382699A true JPS5382699A (en) 1978-07-21
JPS5929557B2 JPS5929557B2 (en) 1984-07-21

Family

ID=15686890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15913076A Expired JPS5929557B2 (en) 1976-12-28 1976-12-28 Semi-insulating gallium arsenide single crystal

Country Status (1)

Country Link
JP (1) JPS5929557B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164800A (en) * 1987-12-18 1989-06-28 Hitachi Cable Ltd Semiinsulating gallium arsenide single crystal
JPH02145499A (en) * 1988-12-28 1990-06-04 Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen Growing method for gallium arsenide single crystals

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055816U (en) * 1983-09-24 1985-04-19 シャープ株式会社 oil stove

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164800A (en) * 1987-12-18 1989-06-28 Hitachi Cable Ltd Semiinsulating gallium arsenide single crystal
JPH02145499A (en) * 1988-12-28 1990-06-04 Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen Growing method for gallium arsenide single crystals

Also Published As

Publication number Publication date
JPS5929557B2 (en) 1984-07-21

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