GB1270227A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1270227A GB1270227A GB267/71A GB26771A GB1270227A GB 1270227 A GB1270227 A GB 1270227A GB 267/71 A GB267/71 A GB 267/71A GB 26771 A GB26771 A GB 26771A GB 1270227 A GB1270227 A GB 1270227A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- connection
- anodized
- aluminium
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H10P95/00—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H10P14/6314—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US496670A | 1970-01-22 | 1970-01-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1270227A true GB1270227A (en) | 1972-04-12 |
Family
ID=21713436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB267/71A Expired GB1270227A (en) | 1970-01-22 | 1971-01-04 | Semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3681147A (enExample) |
| JP (1) | JPS5435075B1 (enExample) |
| DE (1) | DE2100224C3 (enExample) |
| FR (1) | FR2077263B1 (enExample) |
| GB (1) | GB1270227A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3882000A (en) * | 1974-05-09 | 1975-05-06 | Bell Telephone Labor Inc | Formation of composite oxides on III-V semiconductors |
| US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
| JPS5676539A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
| US4517734A (en) * | 1982-05-12 | 1985-05-21 | Eastman Kodak Company | Method of passivating aluminum interconnects of non-hermetically sealed integrated circuit semiconductor devices |
| NL8303268A (nl) * | 1983-09-23 | 1985-04-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
| EP0221351B1 (de) * | 1985-10-22 | 1991-09-25 | Siemens Aktiengesellschaft | Integrierte Halbleiterschaltung mit einem elektrisch leitenden Flächenelement |
| DE10332725A1 (de) * | 2003-07-18 | 2005-02-24 | Forschungszentrum Jülich GmbH | Verfahren zur selbstjustierenden Verkleinerung von Strukturen |
| TWI683351B (zh) * | 2017-12-14 | 2020-01-21 | 新唐科技股份有限公司 | 半導體裝置及其形成方法 |
-
1970
- 1970-01-22 US US4966A patent/US3681147A/en not_active Expired - Lifetime
- 1970-12-17 FR FR7047128A patent/FR2077263B1/fr not_active Expired
- 1970-12-17 JP JP11259270A patent/JPS5435075B1/ja active Pending
-
1971
- 1971-01-04 GB GB267/71A patent/GB1270227A/en not_active Expired
- 1971-01-05 DE DE2100224A patent/DE2100224C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3681147A (en) | 1972-08-01 |
| DE2100224B2 (de) | 1978-09-28 |
| FR2077263B1 (enExample) | 1975-02-21 |
| JPS5435075B1 (enExample) | 1979-10-31 |
| DE2100224C3 (de) | 1979-05-31 |
| FR2077263A1 (enExample) | 1971-10-22 |
| DE2100224A1 (de) | 1971-07-29 |
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