JPS5435075B1 - - Google Patents
Info
- Publication number
- JPS5435075B1 JPS5435075B1 JP11259270A JP11259270A JPS5435075B1 JP S5435075 B1 JPS5435075 B1 JP S5435075B1 JP 11259270 A JP11259270 A JP 11259270A JP 11259270 A JP11259270 A JP 11259270A JP S5435075 B1 JPS5435075 B1 JP S5435075B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P30/22—
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- H10P14/6314—
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- H10P95/00—
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- H10W20/065—
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- H10W20/40—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US496670A | 1970-01-22 | 1970-01-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5435075B1 true JPS5435075B1 (enExample) | 1979-10-31 |
Family
ID=21713436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11259270A Pending JPS5435075B1 (enExample) | 1970-01-22 | 1970-12-17 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3681147A (enExample) |
| JP (1) | JPS5435075B1 (enExample) |
| DE (1) | DE2100224C3 (enExample) |
| FR (1) | FR2077263B1 (enExample) |
| GB (1) | GB1270227A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3882000A (en) * | 1974-05-09 | 1975-05-06 | Bell Telephone Labor Inc | Formation of composite oxides on III-V semiconductors |
| US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
| JPS5676539A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
| US4517734A (en) * | 1982-05-12 | 1985-05-21 | Eastman Kodak Company | Method of passivating aluminum interconnects of non-hermetically sealed integrated circuit semiconductor devices |
| NL8303268A (nl) * | 1983-09-23 | 1985-04-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
| ATE67897T1 (de) * | 1985-10-22 | 1991-10-15 | Siemens Ag | Integrierte halbleiterschaltung mit einem elektrisch leitenden flaechenelement. |
| DE10332725A1 (de) * | 2003-07-18 | 2005-02-24 | Forschungszentrum Jülich GmbH | Verfahren zur selbstjustierenden Verkleinerung von Strukturen |
| TWI683351B (zh) * | 2017-12-14 | 2020-01-21 | 新唐科技股份有限公司 | 半導體裝置及其形成方法 |
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1970
- 1970-01-22 US US4966A patent/US3681147A/en not_active Expired - Lifetime
- 1970-12-17 FR FR7047128A patent/FR2077263B1/fr not_active Expired
- 1970-12-17 JP JP11259270A patent/JPS5435075B1/ja active Pending
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1971
- 1971-01-04 GB GB267/71A patent/GB1270227A/en not_active Expired
- 1971-01-05 DE DE2100224A patent/DE2100224C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2077263B1 (enExample) | 1975-02-21 |
| GB1270227A (en) | 1972-04-12 |
| DE2100224B2 (de) | 1978-09-28 |
| DE2100224A1 (de) | 1971-07-29 |
| US3681147A (en) | 1972-08-01 |
| DE2100224C3 (de) | 1979-05-31 |
| FR2077263A1 (enExample) | 1971-10-22 |