GB1263626A - Epitaxial method for fabricating an avalanche diode and product - Google Patents

Epitaxial method for fabricating an avalanche diode and product

Info

Publication number
GB1263626A
GB1263626A GB24782/69A GB2478269A GB1263626A GB 1263626 A GB1263626 A GB 1263626A GB 24782/69 A GB24782/69 A GB 24782/69A GB 2478269 A GB2478269 A GB 2478269A GB 1263626 A GB1263626 A GB 1263626A
Authority
GB
United Kingdom
Prior art keywords
substrate
regions
doped
epitaxially deposited
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24782/69A
Other languages
English (en)
Inventor
Hayden Martin Leedy Jr
Harry Leroy Stover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1263626A publication Critical patent/GB1263626A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
GB24782/69A 1968-06-17 1969-05-15 Epitaxial method for fabricating an avalanche diode and product Expired GB1263626A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73779068A 1968-06-17 1968-06-17

Publications (1)

Publication Number Publication Date
GB1263626A true GB1263626A (en) 1972-02-16

Family

ID=24965343

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24782/69A Expired GB1263626A (en) 1968-06-17 1969-05-15 Epitaxial method for fabricating an avalanche diode and product

Country Status (4)

Country Link
DE (1) DE1930016C3 (https=)
FR (1) FR2019285B1 (https=)
GB (1) GB1263626A (https=)
NL (1) NL6909204A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134324A1 (en) * 2008-04-29 2009-11-05 Sandisk 3D Llc Reduction of leakage current in a vertical diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241641A (https=) * 1958-07-25
FR1519634A (fr) * 1965-12-30 1968-04-05 Siemens Ag Diode à avalanche pour la production d'oscillations

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134324A1 (en) * 2008-04-29 2009-11-05 Sandisk 3D Llc Reduction of leakage current in a vertical diode
US8450835B2 (en) 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping

Also Published As

Publication number Publication date
DE1930016B2 (de) 1973-10-04
DE1930016A1 (de) 1969-12-18
DE1930016C3 (de) 1974-05-09
NL6909204A (https=) 1969-12-19
FR2019285B1 (https=) 1974-02-22
FR2019285A1 (https=) 1970-07-03

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