GB1260233A - Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase - Google Patents

Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase

Info

Publication number
GB1260233A
GB1260233A GB2816169A GB2816169A GB1260233A GB 1260233 A GB1260233 A GB 1260233A GB 2816169 A GB2816169 A GB 2816169A GB 2816169 A GB2816169 A GB 2816169A GB 1260233 A GB1260233 A GB 1260233A
Authority
GB
United Kingdom
Prior art keywords
crystalline material
gas
deposition
epitaxial deposition
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2816169A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1260233A publication Critical patent/GB1260233A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB2816169A 1968-06-05 1969-06-04 Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase Expired GB1260233A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769520 DE1769520A1 (de) 1968-06-05 1968-06-05 Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke

Publications (1)

Publication Number Publication Date
GB1260233A true GB1260233A (en) 1972-01-12

Family

ID=5700164

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2816169A Expired GB1260233A (en) 1968-06-05 1969-06-04 Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase

Country Status (8)

Country Link
JP (1) JPS5149191B1 (enExample)
AT (1) AT288811B (enExample)
CH (1) CH521163A (enExample)
DE (1) DE1769520A1 (enExample)
FR (1) FR1597032A (enExample)
GB (1) GB1260233A (enExample)
NL (1) NL6906275A (enExample)
SE (1) SE356905B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162367A (en) * 1984-07-23 1986-01-29 Int Standard Electric Corp System for producing semiconductor layer structures by way of epitaxial growth
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
GB2326649A (en) * 1997-06-27 1998-12-30 Samsung Electronics Co Ltd Manufacturing silica film in a continuous process

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096821A (en) * 1976-12-13 1978-06-27 Westinghouse Electric Corp. System for fabricating thin-film electronic components
DE2722545C2 (de) * 1977-05-18 1984-03-08 Kurt Dr.-Ing. 7802 Merzhausen Heber Diffusionsofen zur Behandlung von Halbleitersubstraten
DE2800574A1 (de) * 1978-01-07 1979-07-12 Stanley Electric Co Ltd Medizinisches pruefgeraet zur untersuchung von ohren
DE2830589C2 (de) * 1978-07-12 1985-04-18 Ibm Deutschland Gmbh, 7000 Stuttgart Durchlaufofen zum Prozessieren von Halbleiterplättchen
DE2849240C2 (de) * 1978-11-13 1983-01-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung
FR2498813A1 (fr) * 1981-01-27 1982-07-30 Instruments Sa Installation de traitement de materiaux pour la production de semi-conducteurs
DE3907610A1 (de) * 1989-03-09 1990-09-13 Telefunken Electronic Gmbh Epitaxieverfahren
JP5698059B2 (ja) * 2011-04-08 2015-04-08 株式会社日立国際電気 基板処理装置、及び、太陽電池の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162367A (en) * 1984-07-23 1986-01-29 Int Standard Electric Corp System for producing semiconductor layer structures by way of epitaxial growth
AU582767B2 (en) * 1984-07-23 1989-04-13 Alcatel N.V. A vapour deposition process
US4934315A (en) * 1984-07-23 1990-06-19 Alcatel N.V. System for producing semicondutor layer structures by way of epitaxial growth
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
GB2326649A (en) * 1997-06-27 1998-12-30 Samsung Electronics Co Ltd Manufacturing silica film in a continuous process
GB2326649B (en) * 1997-06-27 1999-09-01 Samsung Electronics Co Ltd Apparatus for manufacturing silica film and method for manufacturing silica film using the same
US6280525B1 (en) 1997-06-27 2001-08-28 Samsung Electronics Co., Ltd. Apparatus for manufacturing silica film

Also Published As

Publication number Publication date
SE356905B (enExample) 1973-06-12
JPS5149191B1 (enExample) 1976-12-24
CH521163A (de) 1972-04-15
AT288811B (de) 1971-03-25
FR1597032A (enExample) 1970-06-22
NL6906275A (enExample) 1969-12-09
DE1769520A1 (de) 1972-03-02

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees