GB1253282A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB1253282A GB1253282A GB07215/69A GB1721569A GB1253282A GB 1253282 A GB1253282 A GB 1253282A GB 07215/69 A GB07215/69 A GB 07215/69A GB 1721569 A GB1721569 A GB 1721569A GB 1253282 A GB1253282 A GB 1253282A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- type
- semi
- conductor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,253,282. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 2 April, 1969 [5 April, 1968], No. 17215/69. Heading H1K. Two varicap diodes are formed back-to-back in a single semi-conductor body. 'The device is preferably of silicon doped with arsenic and boron, and comprises three regions 1, 2, 3 separated by PN junctions J 1 and J 2 , the region 2 being a region common 'to both diodes and being more highly doped than either of the adjacent regions 1, 3. Low resistivity regions 4 and 5 are provided adjacent to regions 1 and 3, respectively, to act as connection contacts to which conductors 7 and 8 are connected. A common bias electrode 9 contacts common region 2 via a connection contact 6. The device is formed epitaxially by thermal decomposition of SiCl 4 doped with AsH 3 to form N-type or B 2 H 6 to form P-type semi-conductor on a silicon substrate. A plurality of devices are made simultaneously and later separated. The device is shaped by etching with an HNO 3 -HF mixture and aluminium contacts applied where required. Germanium or gallium arsenide may also be used as the semi-conductor material. In another embodiment, Fig. 3, not shown, a symmetrical device is produced by forming two cavities in a major surface of a P-type semiconductor wafer and epitaxially growing two N-type regions therein followed by highly doped connection contact regions, and grinding the final surface to expose the original P-type wafer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681764125 DE1764125A1 (en) | 1968-04-05 | 1968-04-05 | Semiconductor device with two capacitance diodes connected in push-pull |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1253282A true GB1253282A (en) | 1971-11-10 |
Family
ID=5697865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB07215/69A Expired GB1253282A (en) | 1968-04-05 | 1969-04-02 | Improvements in and relating to semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1764125A1 (en) |
| FR (1) | FR2007395B1 (en) |
| GB (1) | GB1253282A (en) |
| NL (1) | NL6905093A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3190057B2 (en) * | 1990-07-02 | 2001-07-16 | 株式会社東芝 | Composite integrated circuit device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3193783A (en) * | 1960-05-17 | 1965-07-06 | Bendix Corp | Modulator for low magnitude voltage signals |
| NL6700819A (en) * | 1966-03-14 | 1967-09-15 |
-
1968
- 1968-04-05 DE DE19681764125 patent/DE1764125A1/en active Pending
-
1969
- 1969-04-01 NL NL6905093A patent/NL6905093A/xx unknown
- 1969-04-02 FR FR6910062A patent/FR2007395B1/fr not_active Expired
- 1969-04-02 GB GB07215/69A patent/GB1253282A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2007395A1 (en) | 1970-01-09 |
| DE1764125A1 (en) | 1971-05-06 |
| NL6905093A (en) | 1969-10-07 |
| FR2007395B1 (en) | 1973-10-19 |
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