GB1247269A - Method of producing tantalum nitride film resistors - Google Patents

Method of producing tantalum nitride film resistors

Info

Publication number
GB1247269A
GB1247269A GB3674069A GB3674069A GB1247269A GB 1247269 A GB1247269 A GB 1247269A GB 3674069 A GB3674069 A GB 3674069A GB 3674069 A GB3674069 A GB 3674069A GB 1247269 A GB1247269 A GB 1247269A
Authority
GB
United Kingdom
Prior art keywords
nitride film
tantalum nitride
substrate
film resistors
resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3674069A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of GB1247269A publication Critical patent/GB1247269A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Abstract

1,247,269. Tantalum nitride film resistors. OKI ELECTRIC INDUSTRY CO. Ltd. July 22, 1969 [July 25, 1968], No.36740/69. Heading C7F. Tantalum nitride film resistors are made by reactive sputtering of Ta in a N 2 /Ar atmosphere of pressure less than 5 x 10<SP>-3</SP> Torr, and N 2 partial pressure 3 x 10<SP>-5</SP> to 2 x 10<SP>-4</SP> Torr on to a substrate at 300 to 550‹C. The substrate may be ceramic or glass, and is first washed in detergent, treated supersonically in trichlorethylene, then acetone, and dried. In Fig. 3, chamber 7 is evacuated and the N 2 /Ar atmosphere supplied, and a plasma is generated between anode 11 and filament 10 and concentrated by the magnetic field of coil 12. This causes sputtering of Ta target 14 on to substrate 15 whose temperature is regulated by heater 17 and thermocouple 18, which is protected from the plasma by shield 20. The resistors can be made to have a constant or zero temperature co-efficient by choosing appropriate substrate temperatures and gas pressures.
GB3674069A 1968-07-25 1969-07-22 Method of producing tantalum nitride film resistors Expired GB1247269A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5210968 1968-07-25

Publications (1)

Publication Number Publication Date
GB1247269A true GB1247269A (en) 1971-09-22

Family

ID=12905681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3674069A Expired GB1247269A (en) 1968-07-25 1969-07-22 Method of producing tantalum nitride film resistors

Country Status (1)

Country Link
GB (1) GB1247269A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174718A (en) * 1985-05-07 1986-11-12 Fuji Xerox Co Ltd Crystalline structure in a heating film of a thermal head
CN112525062A (en) * 2021-01-08 2021-03-19 浙江工业大学 Film type resistance strain gauge used in high-pressure hydrogen sulfide environment
CN115354278A (en) * 2022-08-24 2022-11-18 广州天极电子科技股份有限公司 Preparation method of thin film resistor in thin film resistance-capacitance network

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174718A (en) * 1985-05-07 1986-11-12 Fuji Xerox Co Ltd Crystalline structure in a heating film of a thermal head
US4734709A (en) * 1985-05-07 1988-03-29 Fuji Xerox Co., Ltd. Thermal head and method for fabricating
GB2174718B (en) * 1985-05-07 1989-06-28 Fuji Xerox Co Ltd Thermal head and method for fabricating the same
CN112525062A (en) * 2021-01-08 2021-03-19 浙江工业大学 Film type resistance strain gauge used in high-pressure hydrogen sulfide environment
CN112525062B (en) * 2021-01-08 2023-11-14 浙江工业大学 Thin film type resistance strain gauge for high-pressure hydrogen sulfide environment
CN115354278A (en) * 2022-08-24 2022-11-18 广州天极电子科技股份有限公司 Preparation method of thin film resistor in thin film resistance-capacitance network
CN115354278B (en) * 2022-08-24 2023-11-21 广州天极电子科技股份有限公司 Preparation method of thin film resistor in thin film resistor-capacitor network

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