GB1242474A - Improvements in or relating to field effect transistors - Google Patents

Improvements in or relating to field effect transistors

Info

Publication number
GB1242474A
GB1242474A GB4016769A GB4016769A GB1242474A GB 1242474 A GB1242474 A GB 1242474A GB 4016769 A GB4016769 A GB 4016769A GB 4016769 A GB4016769 A GB 4016769A GB 1242474 A GB1242474 A GB 1242474A
Authority
GB
United Kingdom
Prior art keywords
sub
layer
igfet
aug
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4016769A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1242474A publication Critical patent/GB1242474A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

1,242,474. Semi-conductor devices. SIEMENS A.G. 12 Aug., 1969 [13 Aug., 1968], No. 40167/69. Heading H1K. In an IGFET the insulating layer under the control electrode 6 comprises a plurality of sub-layers, that sub-layer 711 nearest the control electrode consisting of silicon nitride and that sub-layer nearest the surface of the semiconductor material 1 consisting of silicon dioxide, the silicon dioxide sub-layer being free from doping materials in a zone 7 adjacent the surface of the semi-conductor material but being doped in a zone 7<SP>1</SP> adjacent the silicon nitride sub-layer with a material such as phosphorus, titanium, or boron which inhibits the mobility of free charge carriers in the layers. The sublayers are preferably produced by pyrolysis. An IGFET with two separate gate electrodes insulated in this way is also described.
GB4016769A 1968-08-13 1969-08-12 Improvements in or relating to field effect transistors Expired GB1242474A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681764824 DE1764824A1 (en) 1968-08-13 1968-08-13 Field effect transistor

Publications (1)

Publication Number Publication Date
GB1242474A true GB1242474A (en) 1971-08-11

Family

ID=5698149

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4016769A Expired GB1242474A (en) 1968-08-13 1969-08-12 Improvements in or relating to field effect transistors

Country Status (7)

Country Link
AT (1) AT305374B (en)
CH (1) CH495632A (en)
DE (1) DE1764824A1 (en)
FR (1) FR2015567B1 (en)
GB (1) GB1242474A (en)
NL (1) NL6911991A (en)
SE (1) SE345764B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT7826422A0 (en) * 1977-09-22 1978-08-02 Rca Corp PLANAR SILICON ON SAPPHIRE (SOS) INTEGRATED CIRCUIT AND METHOD FOR THE MANUFACTURE THEREOF.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1449089A (en) * 1964-07-09 1966-08-12 Rca Corp Semiconductor devices
FR1530106A (en) * 1966-08-12 1968-06-21 Ibm Advanced semiconductor devices and suitable manufacturing processes
GB1208030A (en) * 1967-06-28 1970-10-07 Hitachi Ltd A semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films

Also Published As

Publication number Publication date
AT305374B (en) 1973-02-26
DE1764824A1 (en) 1971-11-04
SE345764B (en) 1972-06-05
CH495632A (en) 1970-08-31
NL6911991A (en) 1970-02-17
FR2015567A1 (en) 1970-04-30
FR2015567B1 (en) 1974-10-31

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