GB1234294A - - Google Patents
Info
- Publication number
- GB1234294A GB1234294A GB1234294DA GB1234294A GB 1234294 A GB1234294 A GB 1234294A GB 1234294D A GB1234294D A GB 1234294DA GB 1234294 A GB1234294 A GB 1234294A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- switch
- aug
- anode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 2
- 229910052582 BN Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA845885T | |||
| US66195467A | 1967-08-21 | 1967-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1234294A true GB1234294A (nl) | 1971-06-03 |
Family
ID=74124947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1234294D Expired GB1234294A (nl) | 1967-08-21 | 1968-08-06 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4743875B1 (nl) |
| CA (1) | CA845885A (nl) |
| DE (1) | DE1764791B2 (nl) |
| FR (1) | FR1578448A (nl) |
| GB (1) | GB1234294A (nl) |
| MY (1) | MY7300382A (nl) |
| NL (1) | NL162251C (nl) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961354A (en) * | 1972-11-17 | 1976-06-01 | Matsushita Electronics Corporation | Mesa type thyristor and its making method |
| CN109698234A (zh) * | 2017-10-23 | 2019-04-30 | 株洲中车时代电气股份有限公司 | 晶闸管及其制造方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| JPS5019437B1 (nl) * | 1970-06-08 | 1975-07-07 | ||
| JPS4918279A (nl) * | 1972-06-08 | 1974-02-18 | ||
| DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| JPS5541029B2 (nl) * | 1972-10-30 | 1980-10-21 | ||
| JPS5314917B1 (nl) * | 1975-06-13 | 1978-05-20 | ||
| JPS5297684A (en) * | 1976-02-12 | 1977-08-16 | Mitsubishi Electric Corp | Semiconductor element |
| IT1072135B (it) * | 1976-12-07 | 1985-04-10 | Indesit | Dispositivo semiconduttore per la deflessione orizzontale |
| JPS5427887Y2 (nl) * | 1978-03-29 | 1979-09-08 | ||
| JPS5547066Y2 (nl) * | 1978-05-16 | 1980-11-05 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
-
0
- CA CA845885A patent/CA845885A/en not_active Expired
-
1968
- 1968-08-06 GB GB1234294D patent/GB1234294A/en not_active Expired
- 1968-08-07 DE DE19681764791 patent/DE1764791B2/de not_active Withdrawn
- 1968-08-20 JP JP5947468A patent/JPS4743875B1/ja active Pending
- 1968-08-20 FR FR1578448D patent/FR1578448A/fr not_active Expired
- 1968-08-20 NL NL6811845.A patent/NL162251C/nl not_active IP Right Cessation
-
1973
- 1973-12-30 MY MY382/73A patent/MY7300382A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961354A (en) * | 1972-11-17 | 1976-06-01 | Matsushita Electronics Corporation | Mesa type thyristor and its making method |
| CN109698234A (zh) * | 2017-10-23 | 2019-04-30 | 株洲中车时代电气股份有限公司 | 晶闸管及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| MY7300382A (en) | 1973-12-31 |
| CA845885A (en) | 1970-06-30 |
| DE1764791B2 (de) | 1973-05-10 |
| DE1764791A1 (de) | 1972-04-06 |
| NL162251C (nl) | 1980-04-15 |
| NL6811845A (nl) | 1969-02-25 |
| FR1578448A (nl) | 1969-08-14 |
| JPS4743875B1 (nl) | 1972-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |