GB1232620A - - Google Patents
Info
- Publication number
- GB1232620A GB1232620A GB1232620DA GB1232620A GB 1232620 A GB1232620 A GB 1232620A GB 1232620D A GB1232620D A GB 1232620DA GB 1232620 A GB1232620 A GB 1232620A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junctions
- row
- read
- pair
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Landscapes
- Semiconductor Memories (AREA)
- Rectifiers (AREA)
- Read Only Memory (AREA)
- Measurement Of Current Or Voltage (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0034982 | 1967-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1232620A true GB1232620A (enExample) | 1971-05-19 |
Family
ID=7205269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1232620D Expired GB1232620A (enExample) | 1967-11-09 | 1968-10-24 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1524879A1 (enExample) |
| FR (1) | FR1597556A (enExample) |
| GB (1) | GB1232620A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3733690A (en) * | 1970-07-13 | 1973-05-22 | Intersil Inc | Double junction read only memory and process of manufacture |
| CA1135854A (en) * | 1977-09-30 | 1982-11-16 | Michel Moussie | Programmable read only memory cell |
| FR2490860B1 (fr) * | 1980-09-24 | 1986-11-28 | Nippon Telegraph & Telephone | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit |
-
1967
- 1967-11-09 DE DE19671524879 patent/DE1524879A1/de active Pending
-
1968
- 1968-10-08 FR FR1597556D patent/FR1597556A/fr not_active Expired
- 1968-10-24 GB GB1232620D patent/GB1232620A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1524879A1 (de) | 1970-11-26 |
| FR1597556A (enExample) | 1970-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |