GB1228717A - - Google Patents

Info

Publication number
GB1228717A
GB1228717A GB1228717DA GB1228717A GB 1228717 A GB1228717 A GB 1228717A GB 1228717D A GB1228717D A GB 1228717DA GB 1228717 A GB1228717 A GB 1228717A
Authority
GB
United Kingdom
Prior art keywords
layer
zinc
tellurium
gallium
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1228717A publication Critical patent/GB1228717A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/039—Displace P-N junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB1228717D 1968-02-26 1969-02-25 Expired GB1228717A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70832468A 1968-02-26 1968-02-26

Publications (1)

Publication Number Publication Date
GB1228717A true GB1228717A (https=) 1971-04-15

Family

ID=24845340

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1228717D Expired GB1228717A (https=) 1968-02-26 1969-02-25

Country Status (5)

Country Link
US (1) US3649382A (https=)
CA (1) CA927253A (https=)
DE (1) DE1909720A1 (https=)
FR (1) FR2002649B1 (https=)
GB (1) GB1228717A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3727115A (en) * 1972-03-24 1973-04-10 Ibm Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous
US4371420A (en) * 1981-03-09 1983-02-01 The United States Of America As Represented By The Secretary Of The Navy Method for controlling impurities in liquid phase epitaxial growth
US4540450A (en) * 1982-06-02 1985-09-10 The United States Of America As Represented By The Secretary Of The Air Force InP:Te Protective layer process for reducing substrate dissociation
DE10241703A1 (de) * 2002-09-09 2004-03-18 Vishay Semiconductor Gmbh Reaktor und Verfahren zur Flüssigphasenepitaxie
EP1576659B1 (en) * 2002-12-20 2019-03-06 Novalux, Inc. Method of fabrication of a support structure for a semiconductor device
JP2008508559A (ja) * 2004-07-30 2008-03-21 ノバラックス，インコーポレイティド 投射型ディスプレイ装置、システムおよび方法
CN108226214A (zh) * 2018-03-09 2018-06-29 沈阳环境科学研究院 热分析用斜截圆柱形坩埚及其使用方法
CN108279250A (zh) * 2018-03-19 2018-07-13 沈阳环境科学研究院 坩埚底呈阶梯形的坩埚及其使用方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
FR1552004A (https=) * 1967-10-20 1969-01-03

Also Published As

Publication number Publication date
FR2002649B1 (https=) 1977-01-14
DE1909720A1 (de) 1969-11-13
CA927253A (en) 1973-05-29
US3649382A (en) 1972-03-14
FR2002649A1 (https=) 1969-10-31

Similar Documents

Publication Publication Date Title
GB1028782A (en) Semiconductor light-producing device
GB1221590A (en) Improvements in or relating to semiconductor devices
GB839842A (en) Improvements in or relating to semi-conductor diodes
GB1236986A (en) Low bulk leakage current avalanche photo-diode
GB1294897A (https=)
GB1223196A (en) Light-emitting diodes and method of making same
GB1320043A (en) Gallium phosphide electroluminescent light sources
GB1347752A (en) Semiconductor electron emitter
GB1228717A (https=)
GB1278462A (en) Electroluminescent device
GB1288294A (https=)
GB1230484A (https=)
GB1173162A (en) Injection-Luminescent Diodes
GB1385634A (en) Gaa1as lasers
GB1442506A (en) Production of yellow output radiation gallium phosphide lumin escence diodes
GB1149109A (en) Preparation of semiconductor compounds
GB1392955A (en) Light emitting diode
JPS55162223A (en) Semiconductor device and its preparation
GB1156905A (en) Improvements in or relating to Luminescence Diodes
JPS5423391A (en) Gallium-arsenic semiconductor element
JPS55124280A (en) Method of fabricating light emitting diode
GB1170799A (en) Semiconductor devices
JPS5394778A (en) Manufacture of semiconductor device
GB1167300A (en) Improvements in or relating to Luminescent Diodes
GB1316490A (en) Electroluminescent devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees