GB1206859A - Power transistors having an epitaxially grown base region - Google Patents

Power transistors having an epitaxially grown base region

Info

Publication number
GB1206859A
GB1206859A GB60174/68A GB6017468A GB1206859A GB 1206859 A GB1206859 A GB 1206859A GB 60174/68 A GB60174/68 A GB 60174/68A GB 6017468 A GB6017468 A GB 6017468A GB 1206859 A GB1206859 A GB 1206859A
Authority
GB
United Kingdom
Prior art keywords
base region
region
emitter region
epitaxial
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB60174/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1206859A publication Critical patent/GB1206859A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB60174/68A 1967-12-29 1968-12-18 Power transistors having an epitaxially grown base region Expired GB1206859A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US69455267A 1967-12-29 1967-12-29
US69455167A 1967-12-29 1967-12-29
US86228069A 1969-09-30 1969-09-30
US1271270A 1970-02-19 1970-02-19

Publications (1)

Publication Number Publication Date
GB1206859A true GB1206859A (en) 1970-09-30

Family

ID=27486226

Family Applications (3)

Application Number Title Priority Date Filing Date
GB60174/68A Expired GB1206859A (en) 1967-12-29 1968-12-18 Power transistors having an epitaxially grown base region
GB4642470A Expired GB1331761A (en) 1967-12-29 1970-09-30 Epi base high speed power transistor
GB2321171*A Expired GB1348991A (en) 1967-12-29 1971-04-19 Epitaxial base high speed pnp power transistor

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB4642470A Expired GB1331761A (en) 1967-12-29 1970-09-30 Epi base high speed power transistor
GB2321171*A Expired GB1348991A (en) 1967-12-29 1971-04-19 Epitaxial base high speed pnp power transistor

Country Status (4)

Country Link
US (3) US3460009A (enExample)
DE (2) DE1816434A1 (enExample)
FR (1) FR1596348A (enExample)
GB (3) GB1206859A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460009A (en) * 1967-12-29 1969-08-05 Westinghouse Electric Corp Constant gain power transistor
US4086610A (en) * 1974-06-28 1978-04-25 Motorola, Inc. High reliability epi-base radiation hardened power transistor
US3935587A (en) * 1974-08-14 1976-01-27 Westinghouse Electric Corporation High power, high frequency bipolar transistor with alloyed gold electrodes
US4383268A (en) * 1980-07-07 1983-05-10 Rca Corporation High-current, high-voltage semiconductor devices having a metallurgical grade substrate
US4428111A (en) 1981-12-07 1984-01-31 Bell Telephone Laboratories, Incorporated Microwave transistor
US5932922A (en) * 1994-08-08 1999-08-03 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US5554880A (en) * 1994-08-08 1996-09-10 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US6211028B1 (en) * 1999-02-05 2001-04-03 Taiwan Semiconductor Manufacturing Company Twin current bipolar device with hi-lo base profile
CN100407441C (zh) * 2003-09-25 2008-07-30 松下电器产业株式会社 半导体器件及其制造方法
JP4487753B2 (ja) * 2004-12-10 2010-06-23 株式会社Ｓｕｍｃｏ シリコンウェーハ用のアルカリエッチング液及び該エッチング液を用いたエッチング方法
DE102008062040B4 (de) 2007-12-13 2015-06-03 Sumco Corporation Epitaxiewafer und Verfahren zu dessen Herstellung
JP2010232335A (ja) * 2009-03-26 2010-10-14 Sanyo Electric Co Ltd 絶縁ゲートバイポーラトランジスタ
US9741834B2 (en) * 2015-04-02 2017-08-22 Qorvo Us, Inc. Heterojunction bipolar transistor architecture
US11282923B2 (en) 2019-12-09 2022-03-22 Qorvo Us, Inc. Bipolar transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130054C (enExample) * 1960-02-12
NL273009A (enExample) * 1960-12-29
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
NL297821A (enExample) * 1962-10-08
BE638165A (enExample) * 1962-10-18
DE1439417B2 (de) * 1964-07-21 1976-09-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer halbleiteranordnung
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
US3427515A (en) * 1966-06-27 1969-02-11 Rca Corp High voltage semiconductor transistor
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
US3469017A (en) * 1967-12-12 1969-09-23 Rca Corp Encapsulated semiconductor device having internal shielding
US3460009A (en) * 1967-12-29 1969-08-05 Westinghouse Electric Corp Constant gain power transistor

Also Published As

Publication number Publication date
FR1596348A (enExample) 1970-06-15
GB1348991A (en) 1974-03-27
GB1331761A (en) 1973-09-26
US3460009A (en) 1969-08-05
US3639815A (en) 1972-02-01
DE1816434A1 (de) 1969-07-24
DE1816436A1 (de) 1969-08-14
US3648123A (en) 1972-03-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years