GB1202152A - Improvements in and relating to semiconductor crystals - Google Patents

Improvements in and relating to semiconductor crystals

Info

Publication number
GB1202152A
GB1202152A GB630/68A GB63068A GB1202152A GB 1202152 A GB1202152 A GB 1202152A GB 630/68 A GB630/68 A GB 630/68A GB 63068 A GB63068 A GB 63068A GB 1202152 A GB1202152 A GB 1202152A
Authority
GB
United Kingdom
Prior art keywords
relating
semiconductor crystals
crystal
jan
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB630/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1202152A publication Critical patent/GB1202152A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,202,152. Crystal-pulling. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1968 [13 Jan., 1967], No. 630/68. Heading BIS. A non-dendritic single crystal of germanium or silicon having flat (111) faces is produced by pulling from a melt a seed crystal having an odd number of twin planes which are perpendicular to the (111) axis and the surface of the melt, the seed crystal being withdrawn in the (211) direction.
GB630/68A 1967-01-13 1968-01-04 Improvements in and relating to semiconductor crystals Expired GB1202152A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60897967A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
GB1202152A true GB1202152A (en) 1970-08-12

Family

ID=24438878

Family Applications (1)

Application Number Title Priority Date Filing Date
GB630/68A Expired GB1202152A (en) 1967-01-13 1968-01-04 Improvements in and relating to semiconductor crystals

Country Status (5)

Country Link
US (1) US3547708A (en)
JP (1) JPS5338268B1 (en)
DE (1) DE1719497A1 (en)
FR (1) FR1549684A (en)
GB (1) GB1202152A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3060065A (en) * 1959-08-06 1962-10-23 Theodore H Orem Method for the growth of preferentially oriented single crystals of metals
US3130040A (en) * 1960-03-21 1964-04-21 Westinghouse Electric Corp Dendritic seed crystals having a critical spacing between three interior twin planes

Also Published As

Publication number Publication date
DE1719497A1 (en) 1971-10-28
FR1549684A (en) 1968-12-13
JPS5338268B1 (en) 1978-10-14
US3547708A (en) 1970-12-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee