GB1202152A - Improvements in and relating to semiconductor crystals - Google Patents
Improvements in and relating to semiconductor crystalsInfo
- Publication number
- GB1202152A GB1202152A GB630/68A GB63068A GB1202152A GB 1202152 A GB1202152 A GB 1202152A GB 630/68 A GB630/68 A GB 630/68A GB 63068 A GB63068 A GB 63068A GB 1202152 A GB1202152 A GB 1202152A
- Authority
- GB
- United Kingdom
- Prior art keywords
- relating
- semiconductor crystals
- crystal
- jan
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,202,152. Crystal-pulling. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1968 [13 Jan., 1967], No. 630/68. Heading BIS. A non-dendritic single crystal of germanium or silicon having flat (111) faces is produced by pulling from a melt a seed crystal having an odd number of twin planes which are perpendicular to the (111) axis and the surface of the melt, the seed crystal being withdrawn in the (211) direction.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60897967A | 1967-01-13 | 1967-01-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1202152A true GB1202152A (en) | 1970-08-12 |
Family
ID=24438878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB630/68A Expired GB1202152A (en) | 1967-01-13 | 1968-01-04 | Improvements in and relating to semiconductor crystals |
Country Status (5)
Country | Link |
---|---|
US (1) | US3547708A (en) |
JP (1) | JPS5338268B1 (en) |
DE (1) | DE1719497A1 (en) |
FR (1) | FR1549684A (en) |
GB (1) | GB1202152A (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3060065A (en) * | 1959-08-06 | 1962-10-23 | Theodore H Orem | Method for the growth of preferentially oriented single crystals of metals |
US3130040A (en) * | 1960-03-21 | 1964-04-21 | Westinghouse Electric Corp | Dendritic seed crystals having a critical spacing between three interior twin planes |
-
1967
- 1967-01-13 US US608979A patent/US3547708A/en not_active Expired - Lifetime
- 1967-12-07 FR FR1549684D patent/FR1549684A/fr not_active Expired
-
1968
- 1968-01-04 GB GB630/68A patent/GB1202152A/en not_active Expired
- 1968-01-11 DE DE19681719497 patent/DE1719497A1/en active Pending
- 1968-01-12 JP JP141468A patent/JPS5338268B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1719497A1 (en) | 1971-10-28 |
FR1549684A (en) | 1968-12-13 |
JPS5338268B1 (en) | 1978-10-14 |
US3547708A (en) | 1970-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |