GB1200375A - Transistors and headers - Google Patents

Transistors and headers

Info

Publication number
GB1200375A
GB1200375A GB42216/67A GB4221667A GB1200375A GB 1200375 A GB1200375 A GB 1200375A GB 42216/67 A GB42216/67 A GB 42216/67A GB 4221667 A GB4221667 A GB 4221667A GB 1200375 A GB1200375 A GB 1200375A
Authority
GB
United Kingdom
Prior art keywords
leads
lead
areas
wafer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42216/67A
Inventor
Carl Siegmund Den Brinker
William Stanley Jones
Gordon Littlejohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB42216/67A priority Critical patent/GB1200375A/en
Publication of GB1200375A publication Critical patent/GB1200375A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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    • H01L2223/64—Impedance arrangements
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    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01039—Yttrium [Y]
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    • H01L2924/30107—Inductance
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,200,375. Semi-conductor devices. TEXAS INSTRUMENTS Ltd. 15 Sept., 1967, No. 42216/67. Heading H1K. The base lead 7 to a transistor wafer 10 has a greater transverse dimension than at least the emitter lead(s) 8, thereby reducing the base lead inductance. In the embodiment the wafer 10 is bonded by its collector region to a metallized area 2 on an insulating support, the collector lead 6, which is bonded to and cantilevered from this area 2, being of the same transverse dimension as the base lead 7. Further metallized areas 3, 4 respectively carry the base and emitter leads 7, 8, Au wires 11, 12 being provided to connect the areas 3, 4 to the relevant regions of the wafer 10. The areas 2-4 are of Ni overlaid with Au, while the leads 6-8 are of Au-plated Cu. If desired, only one emitter lead 8 may be provided, and the two opposed parts of the area 4 may be separated instead of being linked as shown. The device is encapsulated in silicone potting compound 13, apertures 14 in the leads 6, 7 improving the strength of the package. Alternatively, transversely spaced longitudinal slits defining intermediate regions which are displaced relative to the plane of the leads may be provided in the embedded parts of the leads 6, 7 as described in Specification 1,193,519.
GB42216/67A 1967-09-15 1967-09-15 Transistors and headers Expired GB1200375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB42216/67A GB1200375A (en) 1967-09-15 1967-09-15 Transistors and headers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB42216/67A GB1200375A (en) 1967-09-15 1967-09-15 Transistors and headers

Publications (1)

Publication Number Publication Date
GB1200375A true GB1200375A (en) 1970-07-29

Family

ID=10423364

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42216/67A Expired GB1200375A (en) 1967-09-15 1967-09-15 Transistors and headers

Country Status (1)

Country Link
GB (1) GB1200375A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2250918A1 (en) * 1971-10-27 1973-05-10 Westinghouse Electric Corp POWER TRANSISTOR CHIP CARRIER
EP0026788A1 (en) * 1979-03-09 1981-04-15 Fujitsu Limited Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2250918A1 (en) * 1971-10-27 1973-05-10 Westinghouse Electric Corp POWER TRANSISTOR CHIP CARRIER
FR2158037A1 (en) * 1971-10-27 1973-06-08 Westinghouse Electric Corp
EP0026788A1 (en) * 1979-03-09 1981-04-15 Fujitsu Limited Semiconductor device
EP0026788A4 (en) * 1979-03-09 1983-06-17 Fujitsu Ltd Semiconductor device.

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees