GB1173162A - Injection-Luminescent Diodes - Google Patents

Injection-Luminescent Diodes

Info

Publication number
GB1173162A
GB1173162A GB52677/66A GB5267766A GB1173162A GB 1173162 A GB1173162 A GB 1173162A GB 52677/66 A GB52677/66 A GB 52677/66A GB 5267766 A GB5267766 A GB 5267766A GB 1173162 A GB1173162 A GB 1173162A
Authority
GB
United Kingdom
Prior art keywords
junction
zinc
atom
type
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52677/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1173162A publication Critical patent/GB1173162A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
GB52677/66A 1965-11-24 1966-11-24 Injection-Luminescent Diodes Expired GB1173162A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US509598A US3419742A (en) 1965-11-24 1965-11-24 Injection-luminescent gaas diodes having a graded p-n junction

Publications (1)

Publication Number Publication Date
GB1173162A true GB1173162A (en) 1969-12-03

Family

ID=24027334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52677/66A Expired GB1173162A (en) 1965-11-24 1966-11-24 Injection-Luminescent Diodes

Country Status (4)

Country Link
US (1) US3419742A (cg-RX-API-DMAC10.html)
FR (1) FR1514180A (cg-RX-API-DMAC10.html)
GB (1) GB1173162A (cg-RX-API-DMAC10.html)
NL (1) NL6616582A (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508015A (en) * 1966-06-09 1970-04-21 Nat Res Corp Electroluminescent diode and sound recording system
US3530324A (en) * 1967-05-16 1970-09-22 Norton Research Corp Electroluminescent silicon carbide diode with sharply peaked light emission from the edge of the junction
US3535469A (en) * 1968-05-27 1970-10-20 North Research Corp Masked electroluminescent diode and film recording device utilizing the same
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure
NL153030B (nl) * 1969-09-05 1977-04-15 Hitachi Ltd Licht-uitzendende halfgeleiderdiode.
US4049994A (en) * 1976-01-26 1977-09-20 Rca Corporation Light emitting diode having a short transient response time
JPH071798B2 (ja) * 1986-09-12 1995-01-11 日本電気株式会社 発光ダイオ−ド
DE102019008930A1 (de) * 2019-12-20 2021-06-24 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren
DE102019008927B4 (de) * 2019-12-20 2024-04-11 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341937A (en) * 1963-02-20 1967-09-19 Ibm Crystalline injection laser device manufacture

Also Published As

Publication number Publication date
FR1514180A (fr) 1968-02-23
NL6616582A (cg-RX-API-DMAC10.html) 1967-05-25
US3419742A (en) 1968-12-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee