NL6616582A - - Google Patents
Info
- Publication number
- NL6616582A NL6616582A NL6616582A NL6616582A NL6616582A NL 6616582 A NL6616582 A NL 6616582A NL 6616582 A NL6616582 A NL 6616582A NL 6616582 A NL6616582 A NL 6616582A NL 6616582 A NL6616582 A NL 6616582A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US509598A US3419742A (en) | 1965-11-24 | 1965-11-24 | Injection-luminescent gaas diodes having a graded p-n junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6616582A true NL6616582A (cg-RX-API-DMAC10.html) | 1967-05-25 |
Family
ID=24027334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6616582A NL6616582A (cg-RX-API-DMAC10.html) | 1965-11-24 | 1966-11-24 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3419742A (cg-RX-API-DMAC10.html) |
| FR (1) | FR1514180A (cg-RX-API-DMAC10.html) |
| GB (1) | GB1173162A (cg-RX-API-DMAC10.html) |
| NL (1) | NL6616582A (cg-RX-API-DMAC10.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508015A (en) * | 1966-06-09 | 1970-04-21 | Nat Res Corp | Electroluminescent diode and sound recording system |
| US3530324A (en) * | 1967-05-16 | 1970-09-22 | Norton Research Corp | Electroluminescent silicon carbide diode with sharply peaked light emission from the edge of the junction |
| US3535469A (en) * | 1968-05-27 | 1970-10-20 | North Research Corp | Masked electroluminescent diode and film recording device utilizing the same |
| US3560276A (en) * | 1968-12-23 | 1971-02-02 | Bell Telephone Labor Inc | Technique for fabrication of multilayered semiconductor structure |
| NL153030B (nl) * | 1969-09-05 | 1977-04-15 | Hitachi Ltd | Licht-uitzendende halfgeleiderdiode. |
| US4049994A (en) * | 1976-01-26 | 1977-09-20 | Rca Corporation | Light emitting diode having a short transient response time |
| JPH071798B2 (ja) * | 1986-09-12 | 1995-01-11 | 日本電気株式会社 | 発光ダイオ−ド |
| DE102019008930A1 (de) * | 2019-12-20 | 2021-06-24 | Azur Space Solar Power Gmbh | Gasphasenepitaxieverfahren |
| DE102019008927B4 (de) * | 2019-12-20 | 2024-04-11 | Azur Space Solar Power Gmbh | Gasphasenepitaxieverfahren |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341937A (en) * | 1963-02-20 | 1967-09-19 | Ibm | Crystalline injection laser device manufacture |
-
1965
- 1965-11-24 US US509598A patent/US3419742A/en not_active Expired - Lifetime
-
1966
- 1966-11-24 FR FR84790A patent/FR1514180A/fr not_active Expired
- 1966-11-24 NL NL6616582A patent/NL6616582A/xx unknown
- 1966-11-24 GB GB52677/66A patent/GB1173162A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1514180A (fr) | 1968-02-23 |
| US3419742A (en) | 1968-12-31 |
| GB1173162A (en) | 1969-12-03 |