GB1170501A - A Semiconductor Device - Google Patents
A Semiconductor DeviceInfo
- Publication number
- GB1170501A GB1170501A GB493567A GB493567A GB1170501A GB 1170501 A GB1170501 A GB 1170501A GB 493567 A GB493567 A GB 493567A GB 493567 A GB493567 A GB 493567A GB 1170501 A GB1170501 A GB 1170501A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- isolated
- contacts
- conductor
- feb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
1,170,501. Semi-conductor devices; printed circuit assemblies. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 1 Feb., 1967 [19 Feb., 1966], No. 4935/67. Headings H1K and H1R. A semi-conductor device includes passive elements, such as conducting paths 11, 12, on the surface of a semi-conductor body 1, isolated from the body by insulating layers 9, 10 disposed in grooves 7, 8 in the body 1. In the transistor illustrated diffused base and emitter regions 2, 3 are connected to external contacts through large-area, contact regions 11, 12. The insulating layers 9, 10 which may be of silicon dioxide or nitride vapour-deposited through a mask of metal or photo-lacquer, are positioned immediately below the large-area contacts, to minimize the capacitance between the contacts and the body 1. The grooves 7, 8 may be photo-etched. In an alternative embodiment a vapour-deposited resistor (15), Fig. 3a (not shown), connected to the collector region of a transistor (19), is isolated from the semiconductor body (1) by an insulating layer (10) 5-10 Á thick in a groove. Inductors may be similarly isolated, and the invention may also be applied to devices including diodes or integrated circuits.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DET0030490 | 1966-02-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1170501A true GB1170501A (en) | 1969-11-12 |
Family
ID=7555618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB493567A Expired GB1170501A (en) | 1966-02-19 | 1967-02-01 | A Semiconductor Device |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1514930B2 (en) |
FR (1) | FR1511880A (en) |
GB (1) | GB1170501A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2157079A (en) * | 1984-03-30 | 1985-10-16 | Mitsubishi Electric Corp | Electrode arrangement for semiconductor devices |
-
1966
- 1966-02-19 DE DE19661514930 patent/DE1514930B2/en active Pending
-
1967
- 1967-02-01 GB GB493567A patent/GB1170501A/en not_active Expired
- 1967-02-17 FR FR95380A patent/FR1511880A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2157079A (en) * | 1984-03-30 | 1985-10-16 | Mitsubishi Electric Corp | Electrode arrangement for semiconductor devices |
US4709469A (en) * | 1984-03-30 | 1987-12-01 | Mitsubishi Denki Kabushiki Kaisha | Method of making a bipolar transistor with polycrystalline contacts |
Also Published As
Publication number | Publication date |
---|---|
FR1511880A (en) | 1968-02-02 |
DE1514930B2 (en) | 1971-12-30 |
DE1514930A1 (en) | 1969-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |