GB1170501A - A Semiconductor Device - Google Patents

A Semiconductor Device

Info

Publication number
GB1170501A
GB1170501A GB493567A GB493567A GB1170501A GB 1170501 A GB1170501 A GB 1170501A GB 493567 A GB493567 A GB 493567A GB 493567 A GB493567 A GB 493567A GB 1170501 A GB1170501 A GB 1170501A
Authority
GB
United Kingdom
Prior art keywords
semi
isolated
contacts
conductor
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB493567A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1170501A publication Critical patent/GB1170501A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

1,170,501. Semi-conductor devices; printed circuit assemblies. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 1 Feb., 1967 [19 Feb., 1966], No. 4935/67. Headings H1K and H1R. A semi-conductor device includes passive elements, such as conducting paths 11, 12, on the surface of a semi-conductor body 1, isolated from the body by insulating layers 9, 10 disposed in grooves 7, 8 in the body 1. In the transistor illustrated diffused base and emitter regions 2, 3 are connected to external contacts through large-area, contact regions 11, 12. The insulating layers 9, 10 which may be of silicon dioxide or nitride vapour-deposited through a mask of metal or photo-lacquer, are positioned immediately below the large-area contacts, to minimize the capacitance between the contacts and the body 1. The grooves 7, 8 may be photo-etched. In an alternative embodiment a vapour-deposited resistor (15), Fig. 3a (not shown), connected to the collector region of a transistor (19), is isolated from the semiconductor body (1) by an insulating layer (10) 5-10 Á thick in a groove. Inductors may be similarly isolated, and the invention may also be applied to devices including diodes or integrated circuits.
GB493567A 1966-02-19 1967-02-01 A Semiconductor Device Expired GB1170501A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0030490 1966-02-19

Publications (1)

Publication Number Publication Date
GB1170501A true GB1170501A (en) 1969-11-12

Family

ID=7555618

Family Applications (1)

Application Number Title Priority Date Filing Date
GB493567A Expired GB1170501A (en) 1966-02-19 1967-02-01 A Semiconductor Device

Country Status (3)

Country Link
DE (1) DE1514930B2 (en)
FR (1) FR1511880A (en)
GB (1) GB1170501A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2157079A (en) * 1984-03-30 1985-10-16 Mitsubishi Electric Corp Electrode arrangement for semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2157079A (en) * 1984-03-30 1985-10-16 Mitsubishi Electric Corp Electrode arrangement for semiconductor devices
US4709469A (en) * 1984-03-30 1987-12-01 Mitsubishi Denki Kabushiki Kaisha Method of making a bipolar transistor with polycrystalline contacts

Also Published As

Publication number Publication date
FR1511880A (en) 1968-02-02
DE1514930A1 (en) 1969-08-14
DE1514930B2 (en) 1971-12-30

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees