GB1145876A - Method of electrochemically etching silicon - Google Patents
Method of electrochemically etching siliconInfo
- Publication number
- GB1145876A GB1145876A GB2029266A GB2029266A GB1145876A GB 1145876 A GB1145876 A GB 1145876A GB 2029266 A GB2029266 A GB 2029266A GB 2029266 A GB2029266 A GB 2029266A GB 1145876 A GB1145876 A GB 1145876A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- ticl
- organic liquid
- etching silicon
- methanol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052794 bromium Inorganic materials 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract 1
- 150000001408 amides Chemical class 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 abstract 1
- 229910001503 inorganic bromide Inorganic materials 0.000 abstract 1
- 229910001504 inorganic chloride Inorganic materials 0.000 abstract 1
- 229910001505 inorganic iodide Inorganic materials 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
- C25F1/02—Pickling; Descaling
- C25F1/12—Pickling; Descaling in melts
- C25F1/14—Iron or steel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR16295A FR1442535A (fr) | 1965-05-07 | 1965-05-07 | Procédé d'attaque sélective du silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1145876A true GB1145876A (en) | 1969-03-19 |
Family
ID=8578284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2029266A Expired GB1145876A (en) | 1965-05-07 | 1966-05-06 | Method of electrochemically etching silicon |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE679812A (xx) |
CH (1) | CH450856A (xx) |
DE (1) | DE1496764A1 (xx) |
FR (1) | FR1442535A (xx) |
GB (1) | GB1145876A (xx) |
LU (1) | LU50965A1 (xx) |
NL (1) | NL6605960A (xx) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090184092A1 (en) * | 2005-10-28 | 2009-07-23 | Kanto Kagaku Kabuashiki Kaisha | Palladium-Selective Etching Solution and Method for Controlling Etching Selectivity |
US9184364B2 (en) | 2005-03-02 | 2015-11-10 | Rosemount Inc. | Pipeline thermoelectric generator assembly |
-
1965
- 1965-05-07 FR FR16295A patent/FR1442535A/fr not_active Expired
-
1966
- 1966-04-18 CH CH563866A patent/CH450856A/fr unknown
- 1966-04-21 BE BE679812D patent/BE679812A/xx unknown
- 1966-04-25 LU LU50965A patent/LU50965A1/xx unknown
- 1966-05-03 NL NL6605960A patent/NL6605960A/xx unknown
- 1966-05-04 DE DE19661496764 patent/DE1496764A1/de active Pending
- 1966-05-06 GB GB2029266A patent/GB1145876A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9184364B2 (en) | 2005-03-02 | 2015-11-10 | Rosemount Inc. | Pipeline thermoelectric generator assembly |
US20090184092A1 (en) * | 2005-10-28 | 2009-07-23 | Kanto Kagaku Kabuashiki Kaisha | Palladium-Selective Etching Solution and Method for Controlling Etching Selectivity |
Also Published As
Publication number | Publication date |
---|---|
BE679812A (xx) | 1966-10-21 |
DE1496764A1 (de) | 1969-04-10 |
LU50965A1 (xx) | 1966-10-25 |
FR1442535A (fr) | 1966-06-17 |
CH450856A (fr) | 1968-04-30 |
NL6605960A (xx) | 1966-11-08 |
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