GB1140822A - Semi-conductor elements - Google Patents

Semi-conductor elements

Info

Publication number
GB1140822A
GB1140822A GB3879/67A GB387967A GB1140822A GB 1140822 A GB1140822 A GB 1140822A GB 3879/67 A GB3879/67 A GB 3879/67A GB 387967 A GB387967 A GB 387967A GB 1140822 A GB1140822 A GB 1140822A
Authority
GB
United Kingdom
Prior art keywords
conductivity type
semi
region
junction
conductor elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3879/67A
Other languages
English (en)
Inventor
Gerald Whiting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB3879/67A priority Critical patent/GB1140822A/en
Priority to US687662A priority patent/US3538398A/en
Priority to FR1550640D priority patent/FR1550640A/fr
Priority to DE19681639069 priority patent/DE1639069A1/de
Priority to NL6801128A priority patent/NL6801128A/xx
Publication of GB1140822A publication Critical patent/GB1140822A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB3879/67A 1967-01-26 1967-01-26 Semi-conductor elements Expired GB1140822A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB3879/67A GB1140822A (en) 1967-01-26 1967-01-26 Semi-conductor elements
US687662A US3538398A (en) 1967-01-26 1967-12-04 Semiconductor element with improved guard region
FR1550640D FR1550640A (US06373033-20020416-M00035.png) 1967-01-26 1967-12-29
DE19681639069 DE1639069A1 (de) 1967-01-26 1968-01-24 Halbleiterelement
NL6801128A NL6801128A (US06373033-20020416-M00035.png) 1967-01-26 1968-01-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3879/67A GB1140822A (en) 1967-01-26 1967-01-26 Semi-conductor elements

Publications (1)

Publication Number Publication Date
GB1140822A true GB1140822A (en) 1969-01-22

Family

ID=9766611

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3879/67A Expired GB1140822A (en) 1967-01-26 1967-01-26 Semi-conductor elements

Country Status (5)

Country Link
US (1) US3538398A (US06373033-20020416-M00035.png)
DE (1) DE1639069A1 (US06373033-20020416-M00035.png)
FR (1) FR1550640A (US06373033-20020416-M00035.png)
GB (1) GB1140822A (US06373033-20020416-M00035.png)
NL (1) NL6801128A (US06373033-20020416-M00035.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0176146A2 (en) * 1984-09-26 1986-04-02 Philips Electronics Uk Limited High voltage semiconductor devices

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631898B2 (US06373033-20020416-M00035.png) * 1974-01-11 1981-07-24
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
EP0018487B1 (en) * 1979-03-22 1983-06-29 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
DE3012185A1 (de) * 1980-03-28 1981-10-08 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5229642A (en) * 1980-09-01 1993-07-20 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS57201062A (en) * 1981-06-05 1982-12-09 Nec Corp Semiconductor device
JPS5939066A (ja) * 1982-08-27 1984-03-03 Hitachi Ltd 半導体集積回路
NL8204105A (nl) * 1982-10-25 1984-05-16 Philips Nv Halfgeleiderinrichting.
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置
DE19818296C1 (de) * 1998-04-23 1999-08-26 Siemens Ag Hochspannungs-Randabschluß für ein Halbleiterbauelement
JP2003509867A (ja) 1999-09-16 2003-03-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
BE636316A (US06373033-20020416-M00035.png) * 1962-08-23 1900-01-01
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0176146A2 (en) * 1984-09-26 1986-04-02 Philips Electronics Uk Limited High voltage semiconductor devices
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
EP0176146A3 (en) * 1984-09-26 1987-04-15 Philips Electronic And Associated Industries Limited High voltage semiconductor devices

Also Published As

Publication number Publication date
DE1639069A1 (de) 1970-06-25
NL6801128A (US06373033-20020416-M00035.png) 1968-07-29
US3538398A (en) 1970-11-03
FR1550640A (US06373033-20020416-M00035.png) 1968-12-20

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