GB1079261A - Smei-conductor elements and their manufacture - Google Patents

Smei-conductor elements and their manufacture

Info

Publication number
GB1079261A
GB1079261A GB6865A GB6865A GB1079261A GB 1079261 A GB1079261 A GB 1079261A GB 6865 A GB6865 A GB 6865A GB 6865 A GB6865 A GB 6865A GB 1079261 A GB1079261 A GB 1079261A
Authority
GB
United Kingdom
Prior art keywords
junctions
peripheral face
smei
manufacture
conductor elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6865A
Inventor
William Brian Glass
Clifford Victor Harry Miles
Edmund John Page
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB6865A priority Critical patent/GB1079261A/en
Priority to FR44098A priority patent/FR1467297A/en
Publication of GB1079261A publication Critical patent/GB1079261A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Fuses (AREA)
  • Braking Arrangements (AREA)

Abstract

1,079,261. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. Dec. 8, 1965 [Jan. 1, 1965], No. 68/66. Heading H1K. A semi-conductor element 1 contains two PN junctions 8, 9 which diverge towards their peripheries where they emerge at a peripheral face 4 of the element, the material 5 included in an acute angle between each junction and the peripheral face 4 being of higher resistivity than the adjacent material 6, 7 on the other side of either junction, and the arrangement being such that the breakdown voltage across the central portions of the junctions is lower than the breakdown voltage across the junctions where they emerge at the peripheral face 4 of the element.
GB6865A 1965-01-01 1965-01-01 Smei-conductor elements and their manufacture Expired GB1079261A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB6865A GB1079261A (en) 1965-01-01 1965-01-01 Smei-conductor elements and their manufacture
FR44098A FR1467297A (en) 1965-01-01 1965-12-29 asymmetrically conductive element and method for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6865A GB1079261A (en) 1965-01-01 1965-01-01 Smei-conductor elements and their manufacture

Publications (1)

Publication Number Publication Date
GB1079261A true GB1079261A (en) 1967-08-16

Family

ID=9697842

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6865A Expired GB1079261A (en) 1965-01-01 1965-01-01 Smei-conductor elements and their manufacture

Country Status (2)

Country Link
FR (1) FR1467297A (en)
GB (1) GB1079261A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092663A (en) * 1973-08-08 1978-05-30 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092663A (en) * 1973-08-08 1978-05-30 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor device

Also Published As

Publication number Publication date
FR1467297A (en) 1967-01-27

Similar Documents

Publication Publication Date Title
GB1341410A (en) Electrical barrier systems
GB1113446A (en) A semiconductor device
JPS5225713B1 (en)
GB1140822A (en) Semi-conductor elements
GB1079261A (en) Smei-conductor elements and their manufacture
GB1102197A (en) Semi-conductor elements
GB1048740A (en) Semi-conductor elements
GB1218555A (en) Pilfer-resistant box
GB1102836A (en) Multi-junction semi-conductor elements
CA932628A (en) Semiconductor material and devices
DK118568B (en) Encapsulated electrical distribution group.
Ouellette On Thyriopsis halepensis and its conidial stage
CA726266A (en) Circuit arrangement for producing a sawtooth voltage comprising an integrating transistor and a switching transistor of the conductivity type opposite that of the former
AU278969B2 (en) Semi - conductor junction elements and their manufacture
Rowlands ELECTRICAL CONNECTORS--TYPES, MATERIALS, CONSTRUCTION, AND SELECTION FACTORS
NL6415060A (en)
AU3646763A (en) Semi - conductor junction elements and their manufacture
NAKHMANSON The effect of an external electric field on the characteristics of p-n, p-n-p, and p-n-p-n structures(External electric field effects on volt-ampere characteristics and breakdown in p-n, p-n-p and p-n-p-n structures)
FR1481202A (en) Assembly element and its applications
CA664417A (en) Thermoelectric material and devices
BRAZHNIKOV et al. Dependence of voltage switching on the velocity of voltage increment between collector and emitter of p-n p-n type semiconductor devices
CA709110A (en) Thermoelements and devices embodying them
CA743276A (en) Integrated semiconductor tunnel diode and resistance
GB1139780A (en) Semiconductor elements
GB1112565A (en) Semi-conductor components