GB1115937A - Method and apparatus for sputtering thin film resistance elements - Google Patents

Method and apparatus for sputtering thin film resistance elements

Info

Publication number
GB1115937A
GB1115937A GB5082365A GB5082365A GB1115937A GB 1115937 A GB1115937 A GB 1115937A GB 5082365 A GB5082365 A GB 5082365A GB 5082365 A GB5082365 A GB 5082365A GB 1115937 A GB1115937 A GB 1115937A
Authority
GB
United Kingdom
Prior art keywords
target
substrate
thin film
sputtering
resistance elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5082365A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victory Engineering Corp
Original Assignee
Victory Engineering Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victory Engineering Corp filed Critical Victory Engineering Corp
Publication of GB1115937A publication Critical patent/GB1115937A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Abstract

<PICT:1115937/C6-C7/1> Thin film thermistor resistors are made by sputtering resistor material such as metal oxides, metal sulphides or metal borates on to a substrate such as silicon in a stream of ionised gas such as argon, oxygen or hydrogen which is constrained e.g. magnetically between the substrate and the cathode. The apparatus comprises a vacuum chamber 13 surrounded by magnetic coil 12 and containing a filament assembly 16 for ionising a gas introduced via 18, a target 20, substrate 22 and anode 24 located above and between the target and substrate. The target may be a sintered ceramic consisting of 80.1% MnO, 17.6% Ni0 and 2.3% CoO and may be platinized on one side for electrical contact. A carbon mask may be placed between the target and the substrate. On completion of one sputtering a second target may be rotated into position and electrodes sputtered on to the resistor.
GB5082365A 1965-02-25 1965-11-30 Method and apparatus for sputtering thin film resistance elements Expired GB1115937A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43511965A 1965-02-25 1965-02-25

Publications (1)

Publication Number Publication Date
GB1115937A true GB1115937A (en) 1968-06-06

Family

ID=23727060

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5082365A Expired GB1115937A (en) 1965-02-25 1965-11-30 Method and apparatus for sputtering thin film resistance elements

Country Status (2)

Country Link
DE (1) DE1590879A1 (en)
GB (1) GB1115937A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291002A (en) * 1986-06-10 1987-12-17 日本鋼管株式会社 Manufacture of thin film thermistor
EP1058276A2 (en) * 1999-06-03 2000-12-06 Matsushita Electric Industrial Co., Ltd. Thin film thermistor element and method for the fabrication of thin film thermistor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291002A (en) * 1986-06-10 1987-12-17 日本鋼管株式会社 Manufacture of thin film thermistor
JPH0354842B2 (en) * 1986-06-10 1991-08-21
EP1058276A2 (en) * 1999-06-03 2000-12-06 Matsushita Electric Industrial Co., Ltd. Thin film thermistor element and method for the fabrication of thin film thermistor element
EP1058276A3 (en) * 1999-06-03 2004-01-28 Matsushita Electric Industrial Co., Ltd. Thin film thermistor element and method for the fabrication of thin film thermistor element

Also Published As

Publication number Publication date
DE1590879A1 (en) 1970-05-06

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