GB1111678A - Method of fabrication of doped germanium-silicon alloy - Google Patents

Method of fabrication of doped germanium-silicon alloy

Info

Publication number
GB1111678A
GB1111678A GB43837/65A GB4383765A GB1111678A GB 1111678 A GB1111678 A GB 1111678A GB 43837/65 A GB43837/65 A GB 43837/65A GB 4383765 A GB4383765 A GB 4383765A GB 1111678 A GB1111678 A GB 1111678A
Authority
GB
United Kingdom
Prior art keywords
fabrication
melting
silicon alloy
zone
doped germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43837/65A
Inventor
Pierre Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1111678A publication Critical patent/GB1111678A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C30B29/50—Cadmium sulfide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A homogeneous mixture of germanium and silicon containing antimony or indium is produced by zone-melting a coarsely ground mixture of germanium and silicon in a crucible and introducing the dopant before zone-melting or between two successive passes. The induction coil has a frequency of at least 4 Mc/s. The speed of zone-melting is at least 15 mm/min. 30-40 passes in both directions alternately may be made. The product may contain 50-500 ppm of antimony or indium.
GB43837/65A 1964-10-27 1965-10-15 Method of fabrication of doped germanium-silicon alloy Expired GB1111678A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR992829A FR1420509A (en) 1964-10-27 1964-10-27 Germanium-silicon alloy manufacturing process

Publications (1)

Publication Number Publication Date
GB1111678A true GB1111678A (en) 1968-05-01

Family

ID=8841178

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43837/65A Expired GB1111678A (en) 1964-10-27 1965-10-15 Method of fabrication of doped germanium-silicon alloy

Country Status (9)

Country Link
US (1) US3508915A (en)
BE (1) BE670718A (en)
CH (1) CH448542A (en)
DE (1) DE1483201B1 (en)
ES (1) ES318922A1 (en)
FR (1) FR1420509A (en)
GB (1) GB1111678A (en)
LU (1) LU49680A1 (en)
NL (1) NL6513861A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898080A (en) * 1968-05-14 1975-08-05 Atomic Energy Authority Uk Germanium-silicon Thermoelectric elements
US4442449A (en) * 1981-03-16 1984-04-10 Fairchild Camera And Instrument Corp. Binary germanium-silicon interconnect and electrode structure for integrated circuits
JPS63285923A (en) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk Manufacture of silicon-germanium alloy

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (en) * 1951-11-16
US2997410A (en) * 1954-05-03 1961-08-22 Rca Corp Single crystalline alloys
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
BE618606A (en) * 1961-06-09

Also Published As

Publication number Publication date
BE670718A (en) 1966-01-31
FR1420509A (en) 1965-12-10
CH448542A (en) 1967-12-15
ES318922A1 (en) 1967-01-01
DE1483201B1 (en) 1969-09-04
NL6513861A (en) 1966-04-28
LU49680A1 (en) 1965-12-22
US3508915A (en) 1970-04-28

Similar Documents

Publication Publication Date Title
JPS543479A (en) Semiconductor device and its manufacture
GB1111678A (en) Method of fabrication of doped germanium-silicon alloy
GB908033A (en) Improvements in semiconductive wafers and methods of making the same
JPS51134071A (en) Method to eliminate crystal defects of silicon
GB1256438A (en) Improvements in or relating to non-crucible zone melting
JPS5364708A (en) Linear induction motor
GB996008A (en) Improvements in and relating to the manufacture of crystals
CA705927A (en) Method of fluorinating with antimony pentafluoride
CA657785A (en) Method of producing hyperpure silicon, silicon carbide and germanium
JPS533171A (en) Impurity diffusion method
JPS5344186A (en) Semiconductor device
SCHMID-BURGK et al. Intense magnetic fields in astrophysics
JPS5349985A (en) Crystal oscillator
Smirnova et al. ANOMALOUS DEPENDENCE NATURE OF SPIN-RELAXATION VELOCITY ON MAGNETIC FIELD IN NEUTRON-IRRADIATED QUARTZ
GB1123371A (en) Improvements in or relating to crystalline materials
Koji The Helical Heliotron field for plasma confinement
CA618603A (en) Crucible-free zone-melting apparatus
BOLSHAKOV Quantitative separation of thermo-remanent and viscous magnetization components by a method of successive temperature increases
FR1355061A (en) Grinding the edges of circular objects, especially glass
CA789205A (en) Infant's garment with diaper-attaching tabs and method of producing the latter
CHALEAT Establishment of the third approximation for the amplitude perturbation of oscillators, and applications to mechanical problems
PANTELEEV et al. Derivation of the temperature relations of the surface diffusion coefficients of antimony along both a mechanically and chemically polished germanium surface and along an oxidized germanium surface
CA674475A (en) Stable colloidal dispersions and method of preparing same
CA665503A (en) Magnetic material and method of producing the same
JPS5322941A (en) Eddy current type torque transmission device temperature-compensated