ES318922A1 - Procedure for preparation of a germanio-silicon alloy. (Machine-translation by Google Translate, not legally binding) - Google Patents

Procedure for preparation of a germanio-silicon alloy. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES318922A1
ES318922A1 ES0318922A ES318922A ES318922A1 ES 318922 A1 ES318922 A1 ES 318922A1 ES 0318922 A ES0318922 A ES 0318922A ES 318922 A ES318922 A ES 318922A ES 318922 A1 ES318922 A1 ES 318922A1
Authority
ES
Spain
Prior art keywords
mixture
translation
machine
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0318922A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of ES318922A1 publication Critical patent/ES318922A1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C30B29/50—Cadmium sulfide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Preparation process of a germanium-silicon alloy with incorporation of dopant usable particularly for the thermoelectric conversion of energy, characterized in that it comprises the mixture in desired proportions of pieces of germanium and silicon, the fusion in high frequency of this mixture by displacement relative of a self-induction coil and said germanium-silicon mixture and the cooling of the mixture obtained, the fusion being carried out at a frequency and with a sufficiently high speed of displacement to obtain a good homogenization of the mixture. (Machine-translation by Google Translate, not legally binding)
ES0318922A 1964-10-27 1965-10-26 Procedure for preparation of a germanio-silicon alloy. (Machine-translation by Google Translate, not legally binding) Expired ES318922A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR992829A FR1420509A (en) 1964-10-27 1964-10-27 Germanium-silicon alloy manufacturing process

Publications (1)

Publication Number Publication Date
ES318922A1 true ES318922A1 (en) 1967-01-01

Family

ID=8841178

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0318922A Expired ES318922A1 (en) 1964-10-27 1965-10-26 Procedure for preparation of a germanio-silicon alloy. (Machine-translation by Google Translate, not legally binding)

Country Status (9)

Country Link
US (1) US3508915A (en)
BE (1) BE670718A (en)
CH (1) CH448542A (en)
DE (1) DE1483201B1 (en)
ES (1) ES318922A1 (en)
FR (1) FR1420509A (en)
GB (1) GB1111678A (en)
LU (1) LU49680A1 (en)
NL (1) NL6513861A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898080A (en) * 1968-05-14 1975-08-05 Atomic Energy Authority Uk Germanium-silicon Thermoelectric elements
US4442449A (en) * 1981-03-16 1984-04-10 Fairchild Camera And Instrument Corp. Binary germanium-silicon interconnect and electrode structure for integrated circuits
JPS63285923A (en) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk Manufacture of silicon-germanium alloy

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (en) * 1951-11-16
US2997410A (en) * 1954-05-03 1961-08-22 Rca Corp Single crystalline alloys
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
BE638315A (en) * 1961-06-09

Also Published As

Publication number Publication date
NL6513861A (en) 1966-04-28
LU49680A1 (en) 1965-12-22
BE670718A (en) 1966-01-31
CH448542A (en) 1967-12-15
GB1111678A (en) 1968-05-01
FR1420509A (en) 1965-12-10
DE1483201B1 (en) 1969-09-04
US3508915A (en) 1970-04-28

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