GB1111025A - Improvements in and relating to control systems - Google Patents

Improvements in and relating to control systems

Info

Publication number
GB1111025A
GB1111025A GB8336/67A GB833667A GB1111025A GB 1111025 A GB1111025 A GB 1111025A GB 8336/67 A GB8336/67 A GB 8336/67A GB 833667 A GB833667 A GB 833667A GB 1111025 A GB1111025 A GB 1111025A
Authority
GB
United Kingdom
Prior art keywords
crystal
detector
melt
crucible
viewed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8336/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1111025A publication Critical patent/GB1111025A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Abstract

1,111,025. Crystal-pulling. INTERNATIONAL BUSINESS MACHINES CORPORATION. 22 Feb., 1967 [1 March, 1966], No. 8336/67- Heading B1S. [Also in Division G1] The growth conditions of a silicon crystal 20 are adjusted according to the output from a detector 30 sensing both visible light and infra-red radiation from the melt 10. Crystal pull, crucible rotation, crystal rotation, and crucible lift may be controlled, the last named in order to maintain constant the distance between the radiating surface and the detector. The detector may be movable for example by programme to monitor different points on the surface of the melt, monitoring of cooler points towards the periphery of the melt giving a larger crystal cross-section. The crucible is heated by an electrical resistance and covered by a belt jar into which impurities may be introduced. The surface may be viewed through polished fused quartz which may be kept free from deposits by a gas shield. Optimum viewing angles are discussed polarising attenuating discs being introduced as necessary in the radiation path. Control may be effected by a combination of a silicon controlled rectifier and a resetting magnetic amplifier. Suitable spectral bands and dimensions of field viewed are exemplified.
GB8336/67A 1966-03-01 1967-02-22 Improvements in and relating to control systems Expired GB1111025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53081966A 1966-03-01 1966-03-01

Publications (1)

Publication Number Publication Date
GB1111025A true GB1111025A (en) 1968-04-24

Family

ID=24115116

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8336/67A Expired GB1111025A (en) 1966-03-01 1967-02-22 Improvements in and relating to control systems

Country Status (4)

Country Link
US (1) US3493770A (en)
JP (2) JPS4814873B1 (en)
FR (1) FR1522292A (en)
GB (1) GB1111025A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949306B1 (en) * 1969-08-20 1974-12-26
US3639718A (en) * 1970-06-15 1972-02-01 Little Inc A Pressure- and temperature-controlled crystal growing apparatus
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
US3958129A (en) * 1974-08-05 1976-05-18 Motorola, Inc. Automatic crystal diameter control for growth of semiconductor crystals
US4058429A (en) * 1975-12-04 1977-11-15 Westinghouse Electric Corporation Infrared temperature control of Czochralski crystal growth
US4184907A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Control of capillary die shaped crystal growth of silicon and germanium crystals
US4185076A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Apparatus for controlled growth of silicon and germanium crystal ribbons
US4290835A (en) * 1978-06-14 1981-09-22 Mobil Tyco Solar Energy Corporation Method for crystal growth control
DE2923240A1 (en) * 1979-06-08 1980-12-18 Leybold Heraeus Gmbh & Co Kg MEASURING METHOD AND MEASURING ARRANGEMENT FOR THE DIAMETER OF SINGLE CRYSTALS IN PULLING
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
JPS5815098A (en) * 1981-07-16 1983-01-28 Toshiba Corp Production of single crystal
DE3219409C2 (en) * 1982-05-19 1984-10-11 Schweizerische Aluminium Ag, Chippis Method for determining the rate of oxidation at the surface of a molten metal
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
US5037621A (en) * 1989-11-09 1991-08-06 The United States Of America As Represented By The Secretary Of The Army System for the in-situ visualization of a solid liquid interface during crystal growth
JPH0785489B2 (en) * 1991-02-08 1995-09-13 信越半導体株式会社 Single crystal diameter measurement method
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2246907A (en) * 1940-04-12 1941-06-24 William R Webster Continuous molding machine
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
NL253106A (en) * 1960-06-25
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus

Also Published As

Publication number Publication date
DE1619967B2 (en) 1972-06-08
DE1619967A1 (en) 1970-07-30
JPS5036341B1 (en) 1975-11-22
JPS4814873B1 (en) 1973-05-10
FR1522292A (en) 1968-04-26
US3493770A (en) 1970-02-03

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