GB1109068A - A method of producing silicon carbide - Google Patents
A method of producing silicon carbideInfo
- Publication number
- GB1109068A GB1109068A GB48342/65A GB4834265A GB1109068A GB 1109068 A GB1109068 A GB 1109068A GB 48342/65 A GB48342/65 A GB 48342/65A GB 4834265 A GB4834265 A GB 4834265A GB 1109068 A GB1109068 A GB 1109068A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sic
- silane
- sicl2me2
- mixture
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
-
- H10P95/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Fibers (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43222065A | 1965-02-12 | 1965-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1109068A true GB1109068A (en) | 1968-04-10 |
Family
ID=23715250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB48342/65A Expired GB1109068A (en) | 1965-02-12 | 1965-11-15 | A method of producing silicon carbide |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH467725A (enExample) |
| GB (1) | GB1109068A (enExample) |
| NL (1) | NL6601757A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117510236A (zh) * | 2023-11-29 | 2024-02-06 | 保定市北方特种气体有限公司 | 甲基硅烷制备碳化硅涂层的方法 |
-
1965
- 1965-11-15 GB GB48342/65A patent/GB1109068A/en not_active Expired
-
1966
- 1966-02-11 NL NL6601757A patent/NL6601757A/xx unknown
- 1966-02-11 CH CH193366A patent/CH467725A/de unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117510236A (zh) * | 2023-11-29 | 2024-02-06 | 保定市北方特种气体有限公司 | 甲基硅烷制备碳化硅涂层的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CH467725A (de) | 1969-01-31 |
| NL6601757A (enExample) | 1966-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1213156A (en) | Manufacturing filamentary silicon carbide crystals | |
| KR940011352A (ko) | 개선된 특성을 가진 화학 증기 증착- 제조된 실리콘 탄화물 | |
| JPS5587444A (en) | Method of forming insulating film on semiconductor surface | |
| Nishinaga et al. | Vapor growth of boron monophosphide using open and closed tube processes | |
| KR980700460A (ko) | 실리콘 탄화물 단결정을 승화 성장시키기 위한 방법 및 장치(process and device for sublimation growing silicon carbide monocrystals) | |
| GB1236913A (en) | Manufacture of silicon carbide | |
| GB1109068A (en) | A method of producing silicon carbide | |
| GB1134964A (en) | Improvements in or relating to the production of layers of a silicon or germanium nitrogen compound on semiconductor crystals | |
| JPS5358490A (en) | Forming method for film | |
| CN103681259B (zh) | 用于制造碳化硅半导体器件的方法 | |
| GB943360A (en) | Monocrystalline silicon | |
| GB1229128A (enExample) | ||
| SE302914B (enExample) | ||
| GB1002697A (en) | Improvements in or relating to the production of planar semi-conductor surfaces | |
| WO2002057518A3 (en) | Apparatus and process for the preparation of low-iron_contamination single crystal silicon | |
| US3463666A (en) | Monocrystalline beta silicon carbide on sapphire | |
| GB1075555A (en) | Process for the formation of a layer of a semiconductor material on a crystalline base | |
| JPS57188493A (en) | Manufacture of jig for pulling up silicon | |
| GB1056720A (en) | Improved method of epitaxially vapour depositing semiconductor material | |
| US3679470A (en) | Method for producing high purity monocrystalline silicon | |
| JPS54104488A (en) | Production of silicon carbide crystal layer | |
| GB977847A (en) | Method for the production of crystalline particularly monocrystalline boron | |
| TW427951B (en) | Process for production of silicon carbide form material | |
| JPS54152465A (en) | Manufacture of epitaxial wafer | |
| JPS55148420A (en) | Manufacturing of carbonized silicon crystal layer |