GB1107497A - Method of producing electric shunts for bridging a pn-junction in a semiconductor body - Google Patents
Method of producing electric shunts for bridging a pn-junction in a semiconductor bodyInfo
- Publication number
- GB1107497A GB1107497A GB6882/67A GB688267A GB1107497A GB 1107497 A GB1107497 A GB 1107497A GB 6882/67 A GB6882/67 A GB 6882/67A GB 688267 A GB688267 A GB 688267A GB 1107497 A GB1107497 A GB 1107497A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- shunt
- semi
- conductor
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
- H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0101984 | 1966-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1107497A true GB1107497A (en) | 1968-03-27 |
Family
ID=7524118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6882/67A Expired GB1107497A (en) | 1966-02-12 | 1967-02-13 | Method of producing electric shunts for bridging a pn-junction in a semiconductor body |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3589937A (enExample) |
| BE (1) | BE693884A (enExample) |
| CH (1) | CH450556A (enExample) |
| DE (1) | DE1514683B1 (enExample) |
| FR (1) | FR1511259A (enExample) |
| GB (1) | GB1107497A (enExample) |
| NL (1) | NL6701904A (enExample) |
| SE (1) | SE319838B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3744308A1 (de) * | 1987-12-28 | 1989-07-06 | Bbc Brown Boveri & Cie | Leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4079406A (en) * | 1974-08-13 | 1978-03-14 | Siemens Aktiengesellschaft | Thyristor having a plurality of emitter shorts in defined spacial relationship |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE966879C (de) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
| DE1152293B (de) * | 1958-08-12 | 1963-08-01 | Siemens Ag | Verfahren zum oertlich begrenzten AEtzen von pn-UEbergaengen benachbarten Flaechen an Halbleiterkoerpern von elektrischen Halbleiteranordnungen |
| DE1132405B (de) * | 1960-11-04 | 1962-06-28 | Siemens Ag | Verfahren zum lokalisierten AEtzen der Oberflaeche von Werkstuecken, insbesondere von Halbleiterkristallen |
-
1966
- 1966-02-12 DE DE19661514683 patent/DE1514683B1/de active Pending
-
1967
- 1967-01-11 SE SE362/67A patent/SE319838B/xx unknown
- 1967-01-23 CH CH102267A patent/CH450556A/de unknown
- 1967-02-08 NL NL6701904A patent/NL6701904A/xx unknown
- 1967-02-09 BE BE693884D patent/BE693884A/xx unknown
- 1967-02-10 FR FR94598A patent/FR1511259A/fr not_active Expired
- 1967-02-10 US US615111A patent/US3589937A/en not_active Expired - Lifetime
- 1967-02-13 GB GB6882/67A patent/GB1107497A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3744308A1 (de) * | 1987-12-28 | 1989-07-06 | Bbc Brown Boveri & Cie | Leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| SE319838B (enExample) | 1970-01-26 |
| FR1511259A (fr) | 1968-01-26 |
| BE693884A (enExample) | 1967-08-09 |
| CH450556A (de) | 1968-01-31 |
| US3589937A (en) | 1971-06-29 |
| NL6701904A (enExample) | 1967-08-14 |
| DE1514683B1 (de) | 1970-04-02 |
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