FR1511259A - Procédé d'établissement de dérivations électriques servant au shuntage des jonctions p-n dans des corps semiconducteurs - Google Patents
Procédé d'établissement de dérivations électriques servant au shuntage des jonctions p-n dans des corps semiconducteursInfo
- Publication number
- FR1511259A FR1511259A FR94598A FR94598A FR1511259A FR 1511259 A FR1511259 A FR 1511259A FR 94598 A FR94598 A FR 94598A FR 94598 A FR94598 A FR 94598A FR 1511259 A FR1511259 A FR 1511259A
- Authority
- FR
- France
- Prior art keywords
- shunting
- junctions
- semiconductor bodies
- establishing electrical
- electrical branches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0101984 | 1966-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1511259A true FR1511259A (fr) | 1968-01-26 |
Family
ID=7524118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR94598A Expired FR1511259A (fr) | 1966-02-12 | 1967-02-10 | Procédé d'établissement de dérivations électriques servant au shuntage des jonctions p-n dans des corps semiconducteurs |
Country Status (8)
Country | Link |
---|---|
US (1) | US3589937A (fr) |
BE (1) | BE693884A (fr) |
CH (1) | CH450556A (fr) |
DE (1) | DE1514683B1 (fr) |
FR (1) | FR1511259A (fr) |
GB (1) | GB1107497A (fr) |
NL (1) | NL6701904A (fr) |
SE (1) | SE319838B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4079406A (en) * | 1974-08-13 | 1978-03-14 | Siemens Aktiengesellschaft | Thyristor having a plurality of emitter shorts in defined spacial relationship |
DE3744308A1 (de) * | 1987-12-28 | 1989-07-06 | Bbc Brown Boveri & Cie | Leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE966879C (de) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
DE1152293B (de) * | 1958-08-12 | 1963-08-01 | Siemens Ag | Verfahren zum oertlich begrenzten AEtzen von pn-UEbergaengen benachbarten Flaechen an Halbleiterkoerpern von elektrischen Halbleiteranordnungen |
DE1132405B (de) * | 1960-11-04 | 1962-06-28 | Siemens Ag | Verfahren zum lokalisierten AEtzen der Oberflaeche von Werkstuecken, insbesondere von Halbleiterkristallen |
-
1966
- 1966-02-12 DE DE19661514683 patent/DE1514683B1/de active Pending
-
1967
- 1967-01-11 SE SE362/67A patent/SE319838B/xx unknown
- 1967-01-23 CH CH102267A patent/CH450556A/de unknown
- 1967-02-08 NL NL6701904A patent/NL6701904A/xx unknown
- 1967-02-09 BE BE693884D patent/BE693884A/xx unknown
- 1967-02-10 FR FR94598A patent/FR1511259A/fr not_active Expired
- 1967-02-10 US US615111A patent/US3589937A/en not_active Expired - Lifetime
- 1967-02-13 GB GB6882/67A patent/GB1107497A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1107497A (en) | 1968-03-27 |
NL6701904A (fr) | 1967-08-14 |
BE693884A (fr) | 1967-08-09 |
US3589937A (en) | 1971-06-29 |
SE319838B (fr) | 1970-01-26 |
CH450556A (de) | 1968-01-31 |
DE1514683B1 (de) | 1970-04-02 |
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