GB1077456A - Improvements in or relating to the manufacture of thin layers of high purity material - Google Patents
Improvements in or relating to the manufacture of thin layers of high purity materialInfo
- Publication number
- GB1077456A GB1077456A GB4905/66A GB490566A GB1077456A GB 1077456 A GB1077456 A GB 1077456A GB 4905/66 A GB4905/66 A GB 4905/66A GB 490566 A GB490566 A GB 490566A GB 1077456 A GB1077456 A GB 1077456A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- gas
- deposited
- reaction chamber
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052794 bromium Inorganic materials 0.000 abstract 3
- 229910052801 chlorine Inorganic materials 0.000 abstract 3
- 239000000460 chlorine Substances 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- -1 refractory oxides Substances 0.000 abstract 2
- 230000002441 reversible effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/052—Face to face deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0095336 | 1965-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1077456A true GB1077456A (en) | 1967-07-26 |
Family
ID=7519299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4905/66A Expired GB1077456A (en) | 1965-02-05 | 1966-02-04 | Improvements in or relating to the manufacture of thin layers of high purity material |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3460985A (enrdf_load_html_response) |
| AT (1) | AT257692B (enrdf_load_html_response) |
| CH (1) | CH480449A (enrdf_load_html_response) |
| DE (1) | DE1519865A1 (enrdf_load_html_response) |
| GB (1) | GB1077456A (enrdf_load_html_response) |
| NL (1) | NL6601478A (enrdf_load_html_response) |
| SE (1) | SE309576B (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2195663A (en) * | 1986-08-15 | 1988-04-13 | Nippon Telegraph & Telephone | Chemical vapour deposition method and apparatus therefor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5108543A (en) * | 1984-11-07 | 1992-04-28 | Hitachi, Ltd. | Method of surface treatment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3168422A (en) * | 1960-05-09 | 1965-02-02 | Merck & Co Inc | Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited |
| US3316130A (en) * | 1963-05-07 | 1967-04-25 | Gen Electric | Epitaxial growth of semiconductor devices |
-
1965
- 1965-02-05 DE DE19651519865 patent/DE1519865A1/de active Pending
-
1966
- 1966-02-01 US US524303A patent/US3460985A/en not_active Expired - Lifetime
- 1966-02-03 CH CH151466A patent/CH480449A/de not_active IP Right Cessation
- 1966-02-03 SE SE1418/66A patent/SE309576B/xx unknown
- 1966-02-04 AT AT103366A patent/AT257692B/de active
- 1966-02-04 NL NL6601478A patent/NL6601478A/xx unknown
- 1966-02-04 GB GB4905/66A patent/GB1077456A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2195663A (en) * | 1986-08-15 | 1988-04-13 | Nippon Telegraph & Telephone | Chemical vapour deposition method and apparatus therefor |
| GB2195663B (en) * | 1986-08-15 | 1990-08-22 | Nippon Telegraph & Telephone | Chemical vapour deposition method and apparatus therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1519865A1 (de) | 1970-02-26 |
| US3460985A (en) | 1969-08-12 |
| NL6601478A (enrdf_load_html_response) | 1966-08-08 |
| SE309576B (enrdf_load_html_response) | 1969-03-31 |
| CH480449A (de) | 1969-10-31 |
| AT257692B (de) | 1967-10-25 |
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