GB1071573A - Improvements in and relating to methods of manufacturing crystals - Google Patents
Improvements in and relating to methods of manufacturing crystalsInfo
- Publication number
- GB1071573A GB1071573A GB21232/64A GB2123264A GB1071573A GB 1071573 A GB1071573 A GB 1071573A GB 21232/64 A GB21232/64 A GB 21232/64A GB 2123264 A GB2123264 A GB 2123264A GB 1071573 A GB1071573 A GB 1071573A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sic
- cubic
- crystals
- integral
- hexagonal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 10
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL293275 | 1963-05-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1071573A true GB1071573A (en) | 1967-06-07 |
Family
ID=19754735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21232/64A Expired GB1071573A (en) | 1963-05-27 | 1964-05-22 | Improvements in and relating to methods of manufacturing crystals |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1261841B (enrdf_load_stackoverflow) |
| GB (1) | GB1071573A (enrdf_load_stackoverflow) |
| NL (1) | NL293275A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL87348C (enrdf_load_stackoverflow) * | 1954-03-19 | 1900-01-01 |
-
0
- NL NL293275D patent/NL293275A/xx unknown
-
1964
- 1964-05-22 GB GB21232/64A patent/GB1071573A/en not_active Expired
- 1964-05-23 DE DEN25016A patent/DE1261841B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL293275A (enrdf_load_stackoverflow) | |
| DE1261841B (de) | 1968-02-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3634149A (en) | Method of manufacturing aluminium nitride crystals for semiconductor devices | |
| US3956032A (en) | Process for fabricating SiC semiconductor devices | |
| US3577285A (en) | Method for epitaxially growing silicon carbide onto a crystalline substrate | |
| GB1213867A (en) | Method of manufacturing silicon carbide single crystal filaments | |
| GB939051A (en) | Improvements in or relating to layers of semi-conductor material | |
| ES249909A1 (es) | Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sëlido | |
| US3344071A (en) | High resistivity chromium doped gallium arsenide and process of making same | |
| GB1178765A (en) | Improvements in or relating to the Processing of Semiconductor Bodies | |
| GB929559A (en) | Method of growing epitaxial semiconductor layers | |
| GB1000731A (en) | Semiconductor material | |
| GB1273097A (en) | Improvements in or relating to the manufacture of hollow bodies of semiconductor material | |
| GB1071573A (en) | Improvements in and relating to methods of manufacturing crystals | |
| GB1037766A (en) | Improvements relating to gallium arsenide crystals | |
| ES270156A1 (es) | Metodo para ajustar una presiën de vapor de una sustancia en un espacio | |
| GB1035499A (en) | Process for the manufacture of crystalline layers from low volatility substances in the gas phase | |
| US3563816A (en) | Method for the vapor growth of semiconductors | |
| GB1004257A (en) | Improvements in or relating to processes for the preparation of semiconductor arrangements | |
| GB1065728A (en) | Improvements in or relating to the preparation of group b and vb compound crystals | |
| GB1075555A (en) | Process for the formation of a layer of a semiconductor material on a crystalline base | |
| GB1115237A (en) | Semiconductor crystals | |
| GB995911A (en) | A process for use in the production of a semi-conductor device | |
| GB1056720A (en) | Improved method of epitaxially vapour depositing semiconductor material | |
| GB1087268A (en) | A method of producing an homogeneous monocrystal | |
| POWELL et al. | Process for fabricating SiC semiconductor devices[Patent] | |
| FR2158634A5 (en) | Hexagonal silicon carbide mfr - by sublimation in sealed crucible |