GB1031783A - Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates - Google Patents

Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates

Info

Publication number
GB1031783A
GB1031783A GB16848/63A GB1684863A GB1031783A GB 1031783 A GB1031783 A GB 1031783A GB 16848/63 A GB16848/63 A GB 16848/63A GB 1684863 A GB1684863 A GB 1684863A GB 1031783 A GB1031783 A GB 1031783A
Authority
GB
United Kingdom
Prior art keywords
substrate
graphite
silicon carbide
passed
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16848/63A
Inventor
Robert William Brander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB16848/63A priority Critical patent/GB1031783A/en
Publication of GB1031783A publication Critical patent/GB1031783A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057—Carbides
    • C04B41/5059—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A layer of stoichiometric SiC is grown on a SiC substrate by exposing a mass of carbon, heated to at least 1800 DEG C., to an atmosphere containing an inert carrier gas, and elemental Si or a volatile compound of Si, at a vapour pressure of 10-4-10-1 mm. Hg, to give an atmosphere containing Si and C, and exposing the substrate, heated to at least 1500 DEG C., to this atmosphere. Preferably a stream of Si containing gas is passed first over the carbon, e.g. graphite, and then over the substrate. In one method, a graphite tube containing Si in a graphite boat and the substrate, is heated resistively so that the ends are at 500 DEG C., the centre at 2,200 DEG C., the Si at 1500 DEG C. and the substrate at 2000 DEG C. The substrate is a monocrystalline plate, of hexagonal structure, mounted with its main faces (parallel to the 0001 crystal faces) vertical. Argon is passed through at 1 l./min. and entrains Si vapour, which reacts with the graphite to form Si2C, SiC, and SiC2. In a second method, instead of using Si, the argon is passed through a Si compound e.g. SiHCl3 or SiCl4 before entering the tube. The grown layer may be doped by adding to the molten Si or to the gas stream an impurity element or its volatile compound (e.g. halide), e.g. nitrogen (N-type) or BBr3 (P-type); or the impurity may be varied during growth to form PN junctions.
GB16848/63A 1963-04-29 1963-04-29 Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates Expired GB1031783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB16848/63A GB1031783A (en) 1963-04-29 1963-04-29 Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB16848/63A GB1031783A (en) 1963-04-29 1963-04-29 Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates

Publications (1)

Publication Number Publication Date
GB1031783A true GB1031783A (en) 1966-06-02

Family

ID=10084773

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16848/63A Expired GB1031783A (en) 1963-04-29 1963-04-29 Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates

Country Status (1)

Country Link
GB (1) GB1031783A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3520740A (en) * 1967-05-18 1970-07-14 Gen Electric Method of epitaxial growth of alpha silicon carbide by pyrolytic decomposition of a mixture of silane,propane and hydrogen at atmospheric pressure
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
WO1999014405A1 (en) 1997-09-12 1999-03-25 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
US6336971B1 (en) 1997-09-12 2002-01-08 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3520740A (en) * 1967-05-18 1970-07-14 Gen Electric Method of epitaxial growth of alpha silicon carbide by pyrolytic decomposition of a mixture of silane,propane and hydrogen at atmospheric pressure
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
WO1999014405A1 (en) 1997-09-12 1999-03-25 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
US6336971B1 (en) 1997-09-12 2002-01-08 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal

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