GB1065108A - Production of oxide films on solid substrates - Google Patents

Production of oxide films on solid substrates

Info

Publication number
GB1065108A
GB1065108A GB5077/65A GB507765A GB1065108A GB 1065108 A GB1065108 A GB 1065108A GB 5077/65 A GB5077/65 A GB 5077/65A GB 507765 A GB507765 A GB 507765A GB 1065108 A GB1065108 A GB 1065108A
Authority
GB
United Kingdom
Prior art keywords
anode
cathode
plasma
oxide films
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5077/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1065108A publication Critical patent/GB1065108A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

<PICT:1065108/C6-C7/1> Oxide films, e.g. silicon, beryllium or aluminium oxides, are deposited on a substrate which forms an anode by providing an oxygen plasma in contact with the anode, applying a D.C. voltage between the anode and a cathode formed of the element which is to be the cation of the oxide, and applying an R.F. signal above 50 k.c. to the interface between the cathode and the plasma. The R.F. signal acts to periodically interrupt the cathode potentials, which, it is stated, produces an even coating. As shown a quartz tube has horizontal sections 12, 13, the section 12 containing the plasma, and vertical sections 10, 11, which contain the cathode 26 and the anode 30, respectively. The anode and cathode are connected to a D.C. source 40. An R.F. generator 50 is connected to gold leaf rings 51, 52, and the plasma is supported by a slotted tapered waveguide 16. The substrate may be silicon, germanium, tantalum, aluminium, gold, Group III-V semi-conductor materials such as Ga As and GaP, quartz, BeO, and glass.
GB5077/65A 1964-04-09 1965-02-05 Production of oxide films on solid substrates Expired GB1065108A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35847364A 1964-04-09 1964-04-09

Publications (1)

Publication Number Publication Date
GB1065108A true GB1065108A (en) 1967-04-12

Family

ID=23409799

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5077/65A Expired GB1065108A (en) 1964-04-09 1965-02-05 Production of oxide films on solid substrates

Country Status (6)

Country Link
BE (1) BE662243A (en)
DE (1) DE1521595A1 (en)
FR (1) FR1455853A (en)
GB (1) GB1065108A (en)
NL (1) NL6504481A (en)
SE (1) SE313716B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2134336A1 (en) * 1971-04-27 1972-12-08 Cit Alcatel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2134336A1 (en) * 1971-04-27 1972-12-08 Cit Alcatel

Also Published As

Publication number Publication date
FR1455853A (en) 1966-05-20
BE662243A (en) 1965-08-02
SE313716B (en) 1969-08-18
NL6504481A (en) 1965-10-11
DE1521595A1 (en) 1969-12-11

Similar Documents

Publication Publication Date Title
DK120409B (en) Process for forming a thin, transparent metal oxide film containing at least 25% by weight of cobalt oxide on a glass substrate and film-forming solution for carrying out the process.
IT1042046B (en) PROCEDURE FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES ME DIANTE TECHNIQUES WITH MOLECULAR RAYS
GB1448048A (en) Etching semiconductor oxide layers
GB1175780A (en) Improvements in or relating to Housings for Semiconductor Devices
GB814364A (en) Improvements in and relating to electrolytic etching
GB1151068A (en) Improvements in or relating to Electrical Circuit Components.
GB1065108A (en) Production of oxide films on solid substrates
JPS54162969A (en) Plasma etching device
BE591978A (en) Manufacture of crystals, in particular for electrical applications.
IT994153B (en) ETCHING OF SEMICONDUCTORS OF GROUP III V
FR88593E (en) Process and installation for the manufacture of very long submarine electrical cables
BE596095A (en) Process for the manufacture of very high purity indium.
GB1210734A (en) Process for the application of a mixed protective coating to a substrate
SU128008A1 (en) The method of obtaining semiconductor films on dielectrics
ES344101A1 (en) Method of manufacturing a semiconductor device including a semiconductor material of the aiibvi type,and semiconductor device manufactured by this method
GB1145348A (en) Improvements in and relating to sputtering
FR1433701A (en) Process and installation for the manufacture of very long submarine electrical cables
GB1297464A (en)
FR1181552A (en) Method of manufacturing an electrically conductive glass structure
FR1208647A (en) Method of applying an electrically conductive film to glass surfaces
ES336091A1 (en) Improvements in or relating to methods of joining first and second electrically insulating parts of a vacuum vessel by means of glaze
Galakhov Liquation phenomenon in glasses of the system Nd sub 2 O sub 3- SiO sub 2 with small amounts of Nd sub 2 O sub 3
FR1180738A (en) Pressed glass feedthrough insulator for electrical engineering uses
GB1354792A (en) Spark gap device
GB1229473A (en)