GB1060474A - The production of monocrystalline semiconductor bodies of silicon or germanium - Google Patents

The production of monocrystalline semiconductor bodies of silicon or germanium

Info

Publication number
GB1060474A
GB1060474A GB9211/64A GB921164A GB1060474A GB 1060474 A GB1060474 A GB 1060474A GB 9211/64 A GB9211/64 A GB 9211/64A GB 921164 A GB921164 A GB 921164A GB 1060474 A GB1060474 A GB 1060474A
Authority
GB
United Kingdom
Prior art keywords
rod
cut
core
hexagonal
cores
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9211/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH50264A external-priority patent/CH405775A/de
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1060474A publication Critical patent/GB1060474A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9211/64A 1963-03-27 1964-03-04 The production of monocrystalline semiconductor bodies of silicon or germanium Expired GB1060474A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES0084388 1963-03-27
CH50264A CH405775A (de) 1963-05-24 1964-01-17 Digitale Drehzahlmessanordnung
CH50164 1964-01-17

Publications (1)

Publication Number Publication Date
GB1060474A true GB1060474A (en) 1967-03-01

Family

ID=27172156

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9211/64A Expired GB1060474A (en) 1963-03-27 1964-03-04 The production of monocrystalline semiconductor bodies of silicon or germanium

Country Status (4)

Country Link
US (1) US3377182A (https=)
BE (1) BE645005A (https=)
GB (1) GB1060474A (https=)
NL (1) NL6402396A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2181104C2 (ru) * 2000-02-03 2002-04-10 Государственное унитарное предприятие Государственный научный центр Российской Федерации Физико-энергетический институт имени академика А.И. Лейпунского Способ выделения кремния

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL243511A (https=) * 1959-09-18
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
BE624959A (https=) * 1961-11-20
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite
NL295293A (https=) * 1962-07-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2181104C2 (ru) * 2000-02-03 2002-04-10 Государственное унитарное предприятие Государственный научный центр Российской Федерации Физико-энергетический институт имени академика А.И. Лейпунского Способ выделения кремния

Also Published As

Publication number Publication date
NL6402396A (https=) 1965-06-25
BE645005A (https=) 1964-07-01
US3377182A (en) 1968-04-09

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