GB1059226A - Improvements in or relating to semiconductor laser devices - Google Patents

Improvements in or relating to semiconductor laser devices

Info

Publication number
GB1059226A
GB1059226A GB3534964A GB3534964A GB1059226A GB 1059226 A GB1059226 A GB 1059226A GB 3534964 A GB3534964 A GB 3534964A GB 3534964 A GB3534964 A GB 3534964A GB 1059226 A GB1059226 A GB 1059226A
Authority
GB
United Kingdom
Prior art keywords
crystal
junction
stress
relating
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3534964A
Inventor
Christopher David Dobson
Joseph Franks
Peter John Lundberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3534964A priority Critical patent/GB1059226A/en
Publication of GB1059226A publication Critical patent/GB1059226A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)

Abstract

A light-emitting semi-conductor, e.g. a gallium arsenide crystal, has a P-N junction which is mechanically stressed, e.g. by a stylus. The ends of the crystal may be optically flat and part reflecting to permit laser action at room temperature along the plane through the region of stress. The stress may be applied to a face of the crystal (in which case the junction must be near the surface of the crystal, in order to stress the junction without cleaving the crystal) or to an edge of the junction.
GB3534964A 1964-08-28 1964-08-28 Improvements in or relating to semiconductor laser devices Expired GB1059226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3534964A GB1059226A (en) 1964-08-28 1964-08-28 Improvements in or relating to semiconductor laser devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3534964A GB1059226A (en) 1964-08-28 1964-08-28 Improvements in or relating to semiconductor laser devices

Publications (1)

Publication Number Publication Date
GB1059226A true GB1059226A (en) 1967-02-15

Family

ID=10376738

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3534964A Expired GB1059226A (en) 1964-08-28 1964-08-28 Improvements in or relating to semiconductor laser devices

Country Status (1)

Country Link
GB (1) GB1059226A (en)

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